HXY MOSFET FDN5618P-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | FDN5618P-HXY |
| LCSC Part # | C22366812 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 2A SOT-23 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 22pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 5.4nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 22pF | |
| Current - Continuous Drain(Id) | 2A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 5.4nC@10V | |
| Type | P-Channel |
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In-Stock: 10
10 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0779 | $ 0.78 |
| 100+ | $ 0.0627 | $ 6.27 |
| 300+ | $ 0.0552 | $ 16.56 |
| 3,000+ | $ 0.0495 | $ 148.50 |
| 6,000+ | $ 0.0449 | $ 269.40 |
| 9,000+ | $ 0.0427 | $ 384.30 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 22pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 5.4nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 22pF | |
| Current - Continuous Drain(Id) | 2A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 5.4nC@10V | |
| Type | P-Channel |
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C22366812 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



