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HXY MOSFET SI7336ADP-T1-GE3-HXY product image
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HXY MOSFET SI7336ADP-T1-GE3-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
SI7336ADP-T1-GE3-HXY
LCSC Part #
C22366654
Packaging
DFN5x6-8L
Customer #
Key Attributes
MOSFET N-CH 30V 150A DFN5x6-8L
Datasheetpdf iconHXY MOSFET SI7336ADP-T1-GE3-HXY
In-Stock: 690
690 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.5469$ 0.55
10+$ 0.4349$ 4.35
30+$ 0.3879$ 11.64
100+$ 0.3294$ 32.94
500+$ 0.3035$ 151.75
1,000+$ 0.2873$ 287.30
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN5x6-8L
ConfigurationStandalone
Operating Temperature-55℃~+150℃
Drain to Source Voltage30V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)150A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation187W
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.345nF
Gate Charge(Qg)56.9nC@10V
TypeN-Channel
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Introduction

AI Translation

The SI7336ADP-T1-GE3 employs advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • VDS = 30V, ID = 150A
  • RDS(ON) < 2.4mΩ (VGS = 10V)

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply