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HXY MOSFET SI7336ADP-T1-E3-HXY product image
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HXY MOSFET SI7336ADP-T1-E3-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
SI7336ADP-T1-E3-HXY
LCSC Part #
C22366653
Packaging
DFN5x6-8L
Customer #
Key Attributes
MOSFET N-CH 30V 150A DFN5x6-8L
Datasheetpdf iconHXY MOSFET SI7336ADP-T1-E3-HXY
In-Stock: 42
42 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.9361$ 0.94
10+$ 0.7537$ 7.54
30+$ 0.6632$ 19.90
100+$ 0.5728$ 57.28
500+$ 0.5189$ 259.45
1,000+$ 0.4903$ 490.30
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN5x6-8L
ConfigurationStandalone
Operating Temperature-55℃~+150℃
Drain to Source Voltage30V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)150A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation187W
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.345nF
Gate Charge(Qg)56.9nC@10V
TypeN-Channel
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Introduction

AI Translation

The SI7336ADP-T1-E3 employs advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 30V, drain current (ID) = 150A
  • On-resistance (RDS(ON)) < 2.4mΩ at gate-source voltage (VGS) = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply