HXY MOSFET IRFR3910PBF-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | IRFR3910PBF-HXY |
| LCSC Part # | C22366629 |
| Packaging | TO-252-2L |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 20A TO-252-2L |
| Datasheet | |
| Alternative Parts | 20 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 80mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.535nF | |
| Gate Charge(Qg) | 26.2nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 80mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.535nF | |
| Gate Charge(Qg) | 26.2nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The IRFR3910PBF employs advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-source voltage VDS = 100V, drain current ID = 20A
- On-resistance RDS(ON) < 87mΩ at gate-source voltage VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
In-Stock: 185
185 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2473$ 0.2350 | $ 1.18 |
| 50+ | $ 0.1942$ 0.1845 | $ 9.23 |
| 150+ | $ 0.1714$ 0.1629 | $ 24.44 |
| 500+ | $ 0.143$ 0.1359 | $ 67.95 |
| 2,500+ | $ 0.1304$ 0.1239 | $ 309.75 |
| 5,000+ | $ 0.1228$ 0.1167 | $ 583.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 80mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.535nF | |
| Gate Charge(Qg) | 26.2nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 80mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.535nF | |
| Gate Charge(Qg) | 26.2nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The IRFR3910PBF employs advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-source voltage VDS = 100V, drain current ID = 20A
- On-resistance RDS(ON) < 87mΩ at gate-source voltage VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
C22366629 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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