Everspin Tech MR25H128APDFR
| Manufacturer | |
| MPN | MR25H128APDFR |
| LCSC Part # | C22307529 |
| Packaging | - |
| Customer # | |
| Key Attributes | 128Kbit 2.7V~3.6V 40MHz SPI Memory RoHS |
| Datasheet |  Everspin Tech MR25H128APDFR |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Everspin Tech | |
| Packaging | - | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit | |
| Memory Size | 128Kbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Clock Frequency | 40MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Current - Supply | 23mA | |
| Write Cycle Time(tWC) | - | |
| Standby Supply Current | 90uA | |
| Write Cycle Endurance | - | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Everspin Tech | |
| Packaging | - | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit | |
| Memory Size | 128Kbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Clock Frequency | 40MHz |
| Type | Description | |
|---|---|---|
| Access Time | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Current - Supply | 23mA | |
| Write Cycle Time(tWC) | - | |
| Standby Supply Current | 90uA | |
| Write Cycle Endurance | - | |
| Interface | SPI |
Introduction
The MR25H128A is a 128Kb magnetoresistive random access memory with a storage array logically organized as 16Kx8, featuring a four-wire SPI bus interface consisting of chip select, serial input, serial output, and serial clock. This serial MRAM implements a subset of commands common to today's SPI EEPROM and Flash components, enabling drop-in replacement of these components in the same socket and interoperability on a shared SPI bus. Compared to existing serial memory alternatives, serial MRAM offers superior write speed, unlimited endurance, low standby and active power consumption, and more reliable data retention. The device provides serial EEPROM- and serial Flash-compatible read/write timing with no write delay and unlimited read/write endurance. Unlike other serial memories, read and write operations can be performed randomly within the memory with no delay between write operations. The MR25H128A is an ideal memory solution for applications requiring fast data and program storage and retrieval using a minimal number of I/O pins. The device provides highly reliable data storage with operating temperature range options including Industrial (-40℃ to +85℃), AEC-Q100 Grade 1 (-40℃ to +125℃), and AEC-Q100 Grade 3 (-40℃ to +85℃). The device is offered in a 5 mm × 6 mm 8-pin DFN small-pad package, compatible with serial EEPROM, Flash, and FeRAM products.
Features
- No write delay
- Unlimited write endurance
- Data retention greater than 20 years
- Automatic power-loss data protection
- Block write protection
- Fast, simple SPI interface with clock rates up to 40 MHz
- 2.7 to 3.6 V supply voltage range
- Low-current sleep mode
- Industrial and automotive temperature ranges
- RoHS-compliant 8-pin DFN small pad package
- Direct replacement for serial EEPROM, Flash, FeRAM
- Industrial and AEC-Q100 Grade 1 and Grade 3 options available
- Moisture Sensitivity Level MSL-3
Applications
- Industrial control
- Automotive electronics
- Data logging and storage
- Fast program storage and retrieval
- High-reliability applications
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 7.3639 | $ 7.36 |
| 200+ | $ 2.9396 | $ 587.92 |
| 500+ | $ 2.8401 | $ 1420.05 |
| 1,000+ | $ 2.7927 | $ 2792.70 |
Standard Packaging4000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Everspin Tech | |
| Packaging | - | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit | |
| Memory Size | 128Kbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Clock Frequency | 40MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Current - Supply | 23mA | |
| Write Cycle Time(tWC) | - | |
| Standby Supply Current | 90uA | |
| Write Cycle Endurance | - | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Everspin Tech | |
| Packaging | - | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit | |
| Memory Size | 128Kbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Clock Frequency | 40MHz |
| Type | Description | |
|---|---|---|
| Access Time | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Current - Supply | 23mA | |
| Write Cycle Time(tWC) | - | |
| Standby Supply Current | 90uA | |
| Write Cycle Endurance | - | |
| Interface | SPI |
Introduction
The MR25H128A is a 128Kb magnetoresistive random access memory with a storage array logically organized as 16Kx8, featuring a four-wire SPI bus interface consisting of chip select, serial input, serial output, and serial clock. This serial MRAM implements a subset of commands common to today's SPI EEPROM and Flash components, enabling drop-in replacement of these components in the same socket and interoperability on a shared SPI bus. Compared to existing serial memory alternatives, serial MRAM offers superior write speed, unlimited endurance, low standby and active power consumption, and more reliable data retention. The device provides serial EEPROM- and serial Flash-compatible read/write timing with no write delay and unlimited read/write endurance. Unlike other serial memories, read and write operations can be performed randomly within the memory with no delay between write operations. The MR25H128A is an ideal memory solution for applications requiring fast data and program storage and retrieval using a minimal number of I/O pins. The device provides highly reliable data storage with operating temperature range options including Industrial (-40℃ to +85℃), AEC-Q100 Grade 1 (-40℃ to +125℃), and AEC-Q100 Grade 3 (-40℃ to +85℃). The device is offered in a 5 mm × 6 mm 8-pin DFN small-pad package, compatible with serial EEPROM, Flash, and FeRAM products.
Features
- No write delay
- Unlimited write endurance
- Data retention greater than 20 years
- Automatic power-loss data protection
- Block write protection
- Fast, simple SPI interface with clock rates up to 40 MHz
- 2.7 to 3.6 V supply voltage range
- Low-current sleep mode
- Industrial and automotive temperature ranges
- RoHS-compliant 8-pin DFN small pad package
- Direct replacement for serial EEPROM, Flash, FeRAM
- Industrial and AEC-Q100 Grade 1 and Grade 3 options available
- Moisture Sensitivity Level MSL-3
Applications
- Industrial control
- Automotive electronics
- Data logging and storage
- Fast program storage and retrieval
- High-reliability applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |