ST STGP14NC60KD
| Manufacturer | |
| MPN | STGP14NC60KD |
| LCSC Part # | C222224 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | 14 A, 600 V short-circuit rugged IGBT |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Pd - Power Dissipation | 80W | |
| Td(off) | 116ns | |
| Td(on) | 22.5ns | |
| Current - Collector(Ic) | 25A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 15.5pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.5V@7A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 37ns | |
| Switching Energy(Eoff) | 155uJ | |
| Turn-On Energy (Eon) | 82uJ | |
| Input Capacitance(Cies) | 760pF | |
| Gate Charge(Qg) | 34.4nC@15V | |
| Output Capacitance(Coes) | 86pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Pd - Power Dissipation | 80W | |
| Td(off) | 116ns | |
| Td(on) | 22.5ns | |
| Current - Collector(Ic) | 25A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 15.5pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.5V@7A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 37ns | |
| Switching Energy(Eoff) | 155uJ | |
| Turn-On Energy (Eon) | 82uJ | |
| Input Capacitance(Cies) | 760pF | |
| Gate Charge(Qg) | 34.4nC@15V | |
| Output Capacitance(Coes) | 86pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
Features
AI Translation
- Low on voltage drop (VCE(sat))
- Low Cres / Cies ratio (no cross-conduction susceptibility)
- Very soft ultrafast recovery antiparallel diode
- Short-circuit withstand time 10 μs
Applications
AI Translation
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
- Motor drives
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 4.0485 | $ 4.05 |
| 10+ | $ 3.4303 | $ 34.30 |
| 30+ | $ 3.0636 | $ 91.91 |
| 100+ | $ 2.692 | $ 269.20 |
| 500+ | $ 2.5216 | $ 1260.80 |
| 1,000+ | $ 2.4437 | $ 2443.70 |
Standard Packaging50/Full Box | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Pd - Power Dissipation | 80W | |
| Td(off) | 116ns | |
| Td(on) | 22.5ns | |
| Current - Collector(Ic) | 25A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 15.5pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.5V@7A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 37ns | |
| Switching Energy(Eoff) | 155uJ | |
| Turn-On Energy (Eon) | 82uJ | |
| Input Capacitance(Cies) | 760pF | |
| Gate Charge(Qg) | 34.4nC@15V | |
| Output Capacitance(Coes) | 86pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Pd - Power Dissipation | 80W | |
| Td(off) | 116ns | |
| Td(on) | 22.5ns | |
| Current - Collector(Ic) | 25A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 15.5pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.5V@7A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 37ns | |
| Switching Energy(Eoff) | 155uJ | |
| Turn-On Energy (Eon) | 82uJ | |
| Input Capacitance(Cies) | 760pF | |
| Gate Charge(Qg) | 34.4nC@15V | |
| Output Capacitance(Coes) | 86pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
Features
AI Translation
- Low on voltage drop (VCE(sat))
- Low Cres / Cies ratio (no cross-conduction susceptibility)
- Very soft ultrafast recovery antiparallel diode
- Short-circuit withstand time 10 μs
Applications
AI Translation
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
- Motor drives
C222224 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



