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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-89-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 50mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.8nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-89-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 50mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.8nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The 3400Q is the high cell density trenched N ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The 3400Q meets the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Applications
AI Translation
- N-channel enhancement-mode MOSFET.
- Switching applications.
In-Stock: 42,600
42,600 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0386 | $ 0.77 |
| 200+ | $ 0.0306 | $ 6.12 |
| 1,000+ | $ 0.0261 | $ 26.10 |
| 2,000+ | $ 0.0234 | $ 46.80 |
| 10,000+ | $ 0.0211 | $ 211.00 |
| 20,000+ | $ 0.0199 | $ 398.00 |
Standard Packaging1000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-89-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 50mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.8nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-89-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 50mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.8nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The 3400Q is the high cell density trenched N ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The 3400Q meets the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Applications
AI Translation
- N-channel enhancement-mode MOSFET.
- Switching applications.
C21882501 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |  |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |