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GeneSiC Semiconductor MURTA30040
| Manufacturer | |
| MPN | MURTA30040 |
| LCSC Part # | C21462767 |
| Packaging | - |
| Customer # | |
| Key Attributes | 300A 400V 1.3V@150A Diode Arrays RoHS |
| Datasheet |  GeneSiC Semiconductor MURTA30040 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Diode Configuration | - | |
| Current - Rectified | 300A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse(Vr) | 400V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.3V@150A | |
| Reverse Leakage Current (Ir) | 25uA |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Diode Configuration | - | |
| Current - Rectified | 300A |
| Type | Description | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse(Vr) | 400V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.3V@150A | |
| Reverse Leakage Current (Ir) | 25uA |
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Features
AI Translation
- High surge capability
- Type coverage 200 V to 400 V VRRM
- Isolated package
- Electrically isolated substrate
- Non-ESD sensitive
- Heavy-duty triple tower package
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 152.8209 | $ 152.82 |
| 192+ | $ 60.9777 | $ 11707.72 |
| 504+ | $ 58.94 | $ 29705.76 |
| 1,008+ | $ 57.9326 | $ 58396.06 |
Standard Packaging24/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Diode Configuration | - | |
| Current - Rectified | 300A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse(Vr) | 400V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.3V@150A | |
| Reverse Leakage Current (Ir) | 25uA |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Diode Configuration | - | |
| Current - Rectified | 300A |
| Type | Description | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse(Vr) | 400V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.3V@150A | |
| Reverse Leakage Current (Ir) | 25uA |
Report an ErrorShow similar products (0) >
Features
AI Translation
- High surge capability
- Type coverage 200 V to 400 V VRRM
- Isolated package
- Electrically isolated substrate
- Non-ESD sensitive
- Heavy-duty triple tower package
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |