VBsemi Elec CSD18532NQ5B-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | CSD18532NQ5B-VB |
| LCSC Part # | C20755622 |
| Packaging | DFN5x6-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 100A DFN5x6-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.65nF | |
| Gate Charge(Qg) | 70nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.65nF | |
| Gate Charge(Qg) | 70nC@10V | |
| Type | N-Channel |
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Features
AI Translation
- 175°C junction temperature
- Trench power MOSFET
- Material classification: RoHS compliant
In-Stock: 5
5 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.9116$ 1.6249 | $ 1.62 |
| 10+ | $ 1.6306$ 1.3861 | $ 13.86 |
| 30+ | $ 1.4544$ 1.2363 | $ 37.09 |
| 100+ | $ 1.275$ 1.0838 | $ 108.38 |
| 500+ | $ 1.1924$ 1.0136 | $ 506.80 |
| 1,000+ | $ 1.1575$ 0.9839 | $ 983.90 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.65nF | |
| Gate Charge(Qg) | 70nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.65nF | |
| Gate Charge(Qg) | 70nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- 175°C junction temperature
- Trench power MOSFET
- Material classification: RoHS compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



