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VBsemi Elec SUD50N02-06-E3-VB product image
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VBsemi Elec SUD50N02-06-E3-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
SUD50N02-06-E3-VB
LCSC Part #
C20755401
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 20V 100A TO-252
Datasheetpdf iconVBsemi Elec SUD50N02-06-E3-VB
In-Stock: 50
50 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5161$ 0.4387$ 0.44
10+$ 0.4097$ 0.3483$ 3.48
30+$ 0.3652$ 0.3105$ 9.32
100+$ 0.3081$ 0.2619$ 26.19
500+$ 0.2827$ 0.2403$ 120.15
1,000+$ 0.2668$ 0.2268$ 226.80
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-252
Operating Temperature-55℃~+175℃
Drain to Source Voltage20V
Output Capacitance(Coss)730pF
Current - Continuous Drain(Id)100A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation71W
Reverse Transfer Capacitance (Crss@Vds)375pF
RDS(on)4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.66nF
Gate Charge(Qg)26nC@4.5V
TypeN-Channel
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Features

AI Translation
  • Trench power MOSFET
  • Maximum junction temperature 175°C
  • 100% gate resistance (Rg) tested
  • Drain connected to heatsink
  • N-channel MOSFET