Infineon/CYPRESS CY15B016Q-SXET
| Manufacturer | |
| MPN | CY15B016Q-SXET |
| LCSC Part # | C2063128 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | 16Kbit 2.7V~3.65V 16MHz SPI SOIC-8 Memory RoHS |
| Datasheet |  Infineon/CYPRESS CY15B016Q-SXET |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | SOIC-8 | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Operating status indication | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 2.7V~3.65V | |
| Clock Frequency | 16MHz | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | SOIC-8 | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Operating status indication |
| Type | Description | |
|---|---|---|
| Memory Size | 16Kbit | |
| Voltage - Supply | 2.7V~3.65V | |
| Clock Frequency | 16MHz | |
| Interface | SPI |
Introduction
The CY15B016Q is a 16K-bit nonvolatile memory built on an advanced ferroelectric process. Ferroelectric RAM (F-RAM) is nonvolatile and performs reads and writes like a RAM. It retains data reliably for 121 years while eliminating the complexity, overhead, and system-level reliability concerns associated with serial Flash, EEPROM, and other nonvolatile memories. Unlike serial Flash and EEPROM, the CY15B016Q performs write operations at bus speed with no write delay. Data is written to the memory array immediately after each byte is successfully transferred to the device, and the next bus cycle can begin without data polling. In addition, the device offers superior write endurance compared to other nonvolatile memories. The CY15B016Q supports 10¹³ read/write cycles — 10 million more write cycles than EEPROM. These characteristics make the CY15B016Q ideally suited for nonvolatile memory applications requiring frequent or fast writes, such as data collection (where write cycle count can be critical) and demanding industrial control (where the long write times of serial Flash or EEPROM may cause data loss). As a hardware drop-in replacement for serial EEPROM or Flash, the CY15B016Q delivers significant advantages to users. It employs a high-speed SPI bus, further enhancing the high-speed write capability inherent to F-RAM technology. The device is specified over the automotive temperature range of -40°C to +125°C.
Features
- 16K-bit Ferroelectric RAM (F-RAM), logically organized as 2K × 8
- High endurance: 100 trillion (10¹³) read/write cycles
- 121-year data retention
- NoDelay™ write
- Advanced high-reliability ferroelectric process
- Very fast SPI
- Up to 16MHz frequency
- Direct hardware replacement for serial Flash and EEPROM
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
- Sophisticated write protection scheme: hardware protection via write protect (WP) pin; software protection via write disable instruction; software block protection for 1/4, 1/2, or full array
- Low power: 300μA active current at 1MHz; 20μA (typical) standby current
- Low voltage operation: VDD = 3.0V to 3.6V
- Automotive temperature range: -40°C to +125°C
- 8-pin SOIC package
- AEC Q100 Grade 1 compliant
- RoHS compliant
Applications
- Data Acquisition
- Industrial Control
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.2914 | $ 3.29 |
| 10+ | $ 3.2133 | $ 32.13 |
| 30+ | $ 3.1628 | $ 94.88 |
| 100+ | $ 3.1107 | $ 311.07 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | SOIC-8 | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Operating status indication | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 2.7V~3.65V | |
| Clock Frequency | 16MHz | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | SOIC-8 | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Operating status indication |
| Type | Description | |
|---|---|---|
| Memory Size | 16Kbit | |
| Voltage - Supply | 2.7V~3.65V | |
| Clock Frequency | 16MHz | |
| Interface | SPI |
Introduction
The CY15B016Q is a 16K-bit nonvolatile memory built on an advanced ferroelectric process. Ferroelectric RAM (F-RAM) is nonvolatile and performs reads and writes like a RAM. It retains data reliably for 121 years while eliminating the complexity, overhead, and system-level reliability concerns associated with serial Flash, EEPROM, and other nonvolatile memories. Unlike serial Flash and EEPROM, the CY15B016Q performs write operations at bus speed with no write delay. Data is written to the memory array immediately after each byte is successfully transferred to the device, and the next bus cycle can begin without data polling. In addition, the device offers superior write endurance compared to other nonvolatile memories. The CY15B016Q supports 10¹³ read/write cycles — 10 million more write cycles than EEPROM. These characteristics make the CY15B016Q ideally suited for nonvolatile memory applications requiring frequent or fast writes, such as data collection (where write cycle count can be critical) and demanding industrial control (where the long write times of serial Flash or EEPROM may cause data loss). As a hardware drop-in replacement for serial EEPROM or Flash, the CY15B016Q delivers significant advantages to users. It employs a high-speed SPI bus, further enhancing the high-speed write capability inherent to F-RAM technology. The device is specified over the automotive temperature range of -40°C to +125°C.
Features
- 16K-bit Ferroelectric RAM (F-RAM), logically organized as 2K × 8
- High endurance: 100 trillion (10¹³) read/write cycles
- 121-year data retention
- NoDelay™ write
- Advanced high-reliability ferroelectric process
- Very fast SPI
- Up to 16MHz frequency
- Direct hardware replacement for serial Flash and EEPROM
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
- Sophisticated write protection scheme: hardware protection via write protect (WP) pin; software protection via write disable instruction; software block protection for 1/4, 1/2, or full array
- Low power: 300μA active current at 1MHz; 20μA (typical) standby current
- Low voltage operation: VDD = 3.0V to 3.6V
- Automotive temperature range: -40°C to +125°C
- 8-pin SOIC package
- AEC Q100 Grade 1 compliant
- RoHS compliant
Applications
- Data Acquisition
- Industrial Control
C2063128 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |