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ST M24256-DRDW8TP/K product image
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ST M24256-DRDW8TP/KRoHS

Manufacturer
MPN
M24256-DRDW8TP/K
LCSC Part #
C2061704
Packaging
TSSOP-8
Customer #
Key Attributes
256-Kbit serial I2C bus EEPROM - operation
Datasheetpdf iconST M24256-DRDW8TP/K
In-Stock: 6
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QtyUnit PriceTotal Amount
1+$ 1.1003$ 1.10
10+$ 1.0742$ 10.74
30+$ 1.0579$ 31.74
100+$ 1.0417$ 104.17
Standard Packaging4000/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerST
PackagingTSSOP-8
Operating Temperature-40℃~+105℃
FeaturesHardware write protection function;Built-in power-on reset (POR);Built-in error correction code (ECC) function;Noise suppression function
Memory Size256Kbit
Voltage - Supply1.7V~5.5V
Clock Frequency1MHz
Access Time900ns
Data Retention - TDR (Year)200 Years
Current - Supply2mA
Write Cycle Time(tWC)4ms
Standby Supply Current5uA
Write Cycle Endurance4,000,000 Cycles
InterfaceI2C

Introduction

AI Translation

The M24256-DRE is a 256-Kbit serial EEPROM device operating up to 105 ℃. The M24256-DRE is compliant with the level of reliability defined by the AEC-Q100 grade 2. The device is accessed by a simple serial |²C compatible interface running up to 1 MHz. The memory array is based on advanced true EEPROM technology (electrically erasable programmable memory). The M24256-DRE is a byte-alterable memory (〈32 Kx8 bits) organized as 512 pages of 64 bytes in which the data integrity is significantly improved with an embedded Error Correction Code logic. The M24256-DRE offers an additional Identification Page (64 bytes) in which the ST device identification can be read. This page can also be used to store sensitive application parameters which can be later permanently locked in read-only mode.

Features

AI Translation
  • Compatible with all |²C bus modes
  • 1 MHz 400 kHz 100 kHz
  • Memory array: 256 Kbits (32 Kbytes) of EEPROM
  • Page size: 64 bytes
  • Additional Write lockable page (Identification page)
  • Extended temperature and voltage range: -40 ℃ to 105 ℃, 1.7 V to 5.5 V
  • Short Write cycle time: Byte Write within 4 ms, Page Write within 4 ms
  • Write cycle endurance: 4 million Write cycles at 25 ℃, 1.2 million Write cycles at 85 ℃, 900 k Write cycles at 105 ℃
  • Data retention: more than 50 years at 105 ℃, 200 years at 55 ℃
  • ESD Protection (Human Body Model): 4000V
  • Packages RoHS compliant and halogen-free (ECOPACK2)