micron MT45W1MW16PAFA-85 WT

CellularRAM products are high-speed, CMOS PSRAM memories developed for low-power, portable applications. The MT45W2MW16PA is a 32Mb DRAM core device organized as 2 Meg x 16 bits, and the MT45W1MW16PA is a 16Mb DRAM core device organized as 1 Meg x 16 bits. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or Pseudo SRAM offerings. A user-accessible configuration register (CR) defines how the CellularRAM device performs on-chip refresh and whether page mode read accesses are permitted. This register is automatically loaded with a default setting during power-up and can be updated at any time during normal operation.

• Asynchronous and page mode interface
• Random access time: 70ns, 85ns
• VCC, VCCQ voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ
• Page mode read access Sixteen-word page size Interpage read access: 70ns, 85ns Intrapage read access: 20ns, 25ns
• Low power consumption Asynchronous READ: <20mA Intrapage READ: <15mA Standby: 110μA (32Mb – standard), 80μA (16Mb) 90μA (32Mb – low-power option) Deep power-down: <10μA (TYP @ Ø 25℃)
• Low-power features Temperature compensated refresh (TCR) On-chip temperature sensor Partial array refresh (PAR) Deep power-down (DPD) mode