Everspin Tech EMD3D256M16G2-150CBS1R

EMD3D256M08/16B 256Mb DDR3 Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a non-volatile memory that delivers non-volatility and high endurance at DDR3 speeds. The device supports DDR3 operation at rates up to 1333MT/Sec/Pin. It is designed to be fully compliant with all DDR3 DRAM characteristics, including on-die termination (ODT) and internal ZQ calibration, while offering the advantages of data persistence and extremely high write cycle endurance. Using spin-torque MRAM technology, no cell refresh is required, which greatly simplifies system design and reduces overhead. All control and address inputs are synchronized to a pair of externally supplied differential clocks, with input latching occurring at the clock crossover points. I/O is synchronized to a pair of bidirectional strobe signals (DQS, DQS̄). The device employs a RAS̄/CAS̄ multiplexed scheme and operates at 1.5V.

• 256Mb ST-DDR3 Spin-Transfer Torque Magnetic RAM
• Non-volatile 256Mb (32Mb x 8, 16Mb x 16) DDR3
• Supports standard DDR3 SDRAM features
• VDD = 1.5V ± 0.075V
• Up to 667MHz fCK (1333MT/sec/pin)
• Page size 512-bit (x8) or 1024-bit (x16)
• On-die termination
• On-chip DLL aligns DQ, DQS, DQS (overline) transitions to CK transitions
• All address and control inputs latched on rising clock edge
• Burst length 8, programmable burst truncation length 4
• Standard 10x13mm 78-ball (x8) or 96-ball (x16) BGA package