MICROCHIP JAN1N6630US/TR
| Manufacturer | |
| MPN | JAN1N6630US/TR |
| LCSC Part # | C20292626 |
| Packaging | - |
| Customer # | |
| Key Attributes | 900V 1.7V@3A 1.4A Single Diodes |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 900V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.7V@3A | |
| Reverse Leakage Current (Ir) | 2uA@900V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 1.4A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+150℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 900V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.7V@3A | |
| Reverse Leakage Current (Ir) | 2uA@900V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 1.4A |
Introduction
This family of "ultrafast recovery" rectifier diodes meets relevant standards for high-reliability applications where failures cannot be tolerated. These industry-recognized rectifiers, rated at 2.0 to 4.0 amperes and peak repetitive reverse voltages of 200 to 1000 volts, are hermetically sealed in a void-free glass construction with internal "first-level" metallurgical bonding. These devices are also available in axial-lead packages for through-hole mounting. Microsemi offers a broad range of additional rectifier products to address varying current ratings and recovery time speed requirements, including standard, fast, and ultrafast device types in both through-hole and surface-mount packages.
Features
- Surface mount series equivalent to JEDEC-registered 1N6626 through 1N6631 series
- Void-free hermetic glass package
- Extremely rugged construction
- Triple passivation
- Internal "first-level" metallurgical bonding
- JAN, JANTX, and JANTXV products available per MIL-PRF-19500/590
- Screenable to JANS per MIL-PRF-19500 using "SP" prefix, e.g., SP6626US, SP6629US, etc.
- Axial-lead equivalents also available (see separate datasheet for 1N6626 through 1N6631)
Applications
Ultra-fast recovery rectifier series (200 to 1000V), high-reliability applications, switching power supplies or other applications requiring extremely fast switching and low forward loss
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 44.5854 | $ 44.59 |
| 200+ | $ 17.7901 | $ 3558.02 |
| 500+ | $ 17.1963 | $ 8598.15 |
| 1,000+ | $ 16.9016 | $ 16901.60 |
Standard Packaging100/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 900V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.7V@3A | |
| Reverse Leakage Current (Ir) | 2uA@900V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 1.4A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+150℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 900V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.7V@3A | |
| Reverse Leakage Current (Ir) | 2uA@900V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 1.4A |
Introduction
This family of "ultrafast recovery" rectifier diodes meets relevant standards for high-reliability applications where failures cannot be tolerated. These industry-recognized rectifiers, rated at 2.0 to 4.0 amperes and peak repetitive reverse voltages of 200 to 1000 volts, are hermetically sealed in a void-free glass construction with internal "first-level" metallurgical bonding. These devices are also available in axial-lead packages for through-hole mounting. Microsemi offers a broad range of additional rectifier products to address varying current ratings and recovery time speed requirements, including standard, fast, and ultrafast device types in both through-hole and surface-mount packages.
Features
- Surface mount series equivalent to JEDEC-registered 1N6626 through 1N6631 series
- Void-free hermetic glass package
- Extremely rugged construction
- Triple passivation
- Internal "first-level" metallurgical bonding
- JAN, JANTX, and JANTXV products available per MIL-PRF-19500/590
- Screenable to JANS per MIL-PRF-19500 using "SP" prefix, e.g., SP6626US, SP6629US, etc.
- Axial-lead equivalents also available (see separate datasheet for 1N6626 through 1N6631)
Applications
Ultra-fast recovery rectifier series (200 to 1000V), high-reliability applications, switching power supplies or other applications requiring extremely fast switching and low forward loss
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

