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Infineon FF800R12KE7PHPSA1 product image
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Infineon FF800R12KE7PHPSA1RoHS

Manufacturer
Infineon
MPN
FF800R12KE7PHPSA1
LCSC Part #
C20190945
Packaging
-
Customer #
Key Attributes
800A 1.2kV IGBT Modules RoHS
Datasheetpdf iconInfineon FF800R12KE7PHPSA1
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QtyUnit Price(Reference Only)Total Amount
1+$ 408.938$ 408.94
200+$ 163.1689$ 32633.78
496+$ 157.717$ 78227.63
1,000+$ 155.0219$ 155021.90
Standard Packaging8/Full Tray
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
Packaging-
Pd - Power Dissipation-
Td(off)544ns
Td(on)500ns
Current - Collector(Ic)800A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)600pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V
Gate Charge(Qg)12.8uC@600V
Vce Saturation(VCE(sat))1.5V
Reverse Recovery Time(trr)-
Switching Energy(Eoff)69.7mJ
Turn-On Energy (Eon)27.2mJ
Operating Temperature-40℃~+175℃
Input Capacitance(Cies)122nF
Output Capacitance(Coes)-
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Features

AI Translation
  • V_CES = 1200 V
  • IC nom = 800 A / ICRM = 1600 A
  • TRENCHSTOP IGBT7
  • V_CE, sat with positive temperature coefficient
  • Standard housing
  • 4 kV AC 1-minute isolation
  • High creepage distance and clearance
  • High power density
  • Isolated baseplate
  • Package CTI > 400

Applications

AI Translation
  • Three-level applications
  • Commercial and agricultural vehicles
  • High-power converters
  • Motor drives
  • Servo drives
  • Solar applications
  • UPS systems