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DIODES DMTH45M5LPSW-13
| Produttore | |
| Cod. Prod. | DMTH45M5LPSW-13 |
| Cod. LCSC | C19950029 |
| Imballo | PowerDI5060-8 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 40V 86A PowerDI5060-8 |
| Scheda Tecnica |  DIODES DMTH45M5LPSW-13 |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI5060-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 86A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Pd - Power Dissipation | 72W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 13.9nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI5060-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 86A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Pd - Power Dissipation | 72W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 13.9nC@10V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Caratteristiche
Traduzione AI
- Rated to +175°C – Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
- High Conversion Efficiency
- Low RDS(ON) – Minimizes Power Losses
- Wettable Flank for Improved Optical Inspection
- Fast Switching Speed
- Low Input Capacitance
- Lead-Free Finish; RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applicazioni
Traduzione AI
- High frequency switching
- Synchronous rectifications
- DC-DC converters
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 2.5182 | $ 2.52 |
| 10+ | $ 2.4857 | $ 24.86 |
| 30+ | $ 2.4646 | $ 73.94 |
| 100+ | $ 2.4451 | $ 244.51 |
Package Standard2500/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI5060-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 86A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Pd - Power Dissipation | 72W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 13.9nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI5060-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 86A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Pd - Power Dissipation | 72W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 13.9nC@10V | |
| Type | N-Channel |
Segnala un erroreMostra prodotti simili (0) >
Descrizione
Traduzione AI
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Caratteristiche
Traduzione AI
- Rated to +175°C – Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
- High Conversion Efficiency
- Low RDS(ON) – Minimizes Power Losses
- Wettable Flank for Improved Optical Inspection
- Fast Switching Speed
- Low Input Capacitance
- Lead-Free Finish; RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applicazioni
Traduzione AI
- High frequency switching
- Synchronous rectifications
- DC-DC converters
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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