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ElecSuper AO3409-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
AO3409-ES
LCSC Part #
C19725086
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 30V 3.8A SOT-23
Datasheetpdf iconElecSuper AO3409-ES
In-Stock: 2,340
2,340 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0264$ 0.53
200+$ 0.0207$ 4.14
600+$ 0.0176$ 10.56
3,000+$ 0.0149$ 44.70
9,000+$ 0.0133$ 119.70
21,000+$ 0.0124$ 260.40
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Output Capacitance(Coss)52pF
Pd - Power Dissipation1.14W
Operating Temperature-55℃~+150℃
Configuration-
Drain to Source Voltage30V
Current - Continuous Drain(Id)3.8A
Gate Threshold Voltage (Vgs(th))2.5V
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)60mΩ@10V;105mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)260pF
Gate Charge(Qg)5.5nC@10V
TypeP-Channel
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Introduction

AI Translation

AO3409-ES is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard AO3409-ES is a lead-free product.

Features

AI Translation
  • -30V, RDS(ON) = 60 mΩ (typ.) @ VGS = -10V
  • RDS(ON) = 105 mΩ (typ.) @ VGS = -4.5V
  • Fast switching
  • High-density cell design for low RDS(ON)
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion