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VBsemi Elec IRFR9N20DTRPBF-VB product image
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VBsemi Elec IRFR9N20DTRPBF-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
IRFR9N20DTRPBF-VB
LCSC Part #
C19632234
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 200V 10A TO-252
Datasheetpdf iconVBsemi Elec IRFR9N20DTRPBF-VB
In-Stock: 14
14 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6982$ 0.5935$ 0.59
10+$ 0.5684$ 0.4832$ 4.83
30+$ 0.5019$ 0.4267$ 12.80
100+$ 0.437$ 0.3715$ 37.15
500+$ 0.399$ 0.3392$ 169.60
1,000+$ 0.3784$ 0.3217$ 321.70
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-252
Operating Temperature-55℃~+175℃
Drain to Source Voltage200V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)245mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
Gate Charge(Qg)34nC@10V
TypeN-Channel
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Features

AI Translation
  • Trench power MOSFET
  • 175 °C junction temperature
  • PWM optimized
  • 100% gate resistance (Rg) tested
  • RoHS compliant (Directive 2002/95/EC)

Applications

AI Translation
  • Primary-side switch