15% OFF
- Diagramma pin
- Footprint
Immagini a scopo illustrativo
Modelli EDAEasyEDA
VBsemi Elec FQD19N10TM-VB
| Produttore | VBsemi ElecAsian Brands |
| Cod. Prod. | FQD19N10TM-VB |
| Cod. LCSC | C19632113 |
| Imballo | TO-252 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 100V 15A TO-252 |
| Scheda Tecnica |  VBsemi Elec FQD19N10TM-VB |
| Parti alternative | 20 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 120pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 114mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 120pF | |
| Current - Continuous Drain(Id) | 15A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 114mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | N-Channel |
Segnala un erroreMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Trench power MOSFET
- Junction temperature 150°C
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant (Directive 2002/95/EC)
Applicazioni
Traduzione AI
- Primary-side switch
Disponibile: 50
50 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.497$ 0.4225 | $ 0.42 |
| 10+ | $ 0.3906$ 0.3321 | $ 3.32 |
| 30+ | $ 0.3446$ 0.2930 | $ 8.79 |
| 100+ | $ 0.2874$ 0.2443 | $ 24.43 |
| 500+ | $ 0.262$ 0.2227 | $ 111.35 |
| 1,000+ | $ 0.2461$ 0.2092 | $ 209.20 |
Package Standard2500/Full Reel | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 120pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 114mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 120pF | |
| Current - Continuous Drain(Id) | 15A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 114mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | N-Channel |
Segnala un erroreMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Trench power MOSFET
- Junction temperature 150°C
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant (Directive 2002/95/EC)
Applicazioni
Traduzione AI
- Primary-side switch
C19632113 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Confezione | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| HM10N10K-VB | VBsemi Elec | TO-252 | 78 | $0.4438 $0.5221 | ||
| IPD110N12N3G-VB | VBsemi Elec | TO-252 | 50 | $0.8357 $0.9831 | ||
| D10N10TA-VB | VBsemi Elec | TO-252 | 50 | $0.4438 $0.5221 | ||
| AOD474-VB | VBsemi Elec | TO-252 | 50 | $0.4387 $0.5161 | ||
| IRFR120TRPBF-VB | VBsemi Elec | TO-252 | 50 | $0.4482 $0.5272 | ||
| AP18T10GH-VB | VBsemi Elec | TO-252 | 45 | $0.4387 $0.5161 | ||
| FS5AS-2-VB | VBsemi Elec | TO-252 | 20 | $0.4225 $0.497 | ||
| K654-Z-E1-VB | VBsemi Elec | TO-252 | 20 | $0.4225 $0.497 | ||
| 09T10GH-HF-VB | VBsemi Elec | TO-252 | 10 | $0.4225 $0.497 | ||
| FDD86113LZ-VB | VBsemi Elec | TO-252 | 10 | $0.4474 $0.5263 | ||
| IRLR120PBF-VB | VBsemi Elec | TO-252 | 10 | $0.4474 $0.5263 | ||
| MTD10N10EL-VB | VBsemi Elec | TO-252 | 10 | $0.4474 $0.5263 | ||
| HUF76609D3ST-VB | VBsemi Elec | TO-252 | 10 | $0.4474 $0.5263 | ||
| ZXMN10A09KTC-VB | VBsemi Elec | TO-252 | 2 | $0.5575 $0.6558 | ||
| LR3410-VB | VBsemi Elec | TO-252 | 0 | $0.5881 $0.619 | ||
| 2SK1299STL-E-VB | VBsemi Elec | TO-252 | 0 | $0.6237 $0.6565 | ||
| AULR120N-VB | VBsemi Elec | TO-252 | 0 | $0.6237 $0.6565 | ||
| SM1A24NSU-VB | VBsemi Elec | TO-252 | 0 | $ 0.647 | ||
| SM1A25NSU-VB | VBsemi Elec | TO-252 | 0 | $ 0.647 | ||
| IRLR110PBF-VB | VBsemi Elec | TO-252 | 0 | $0.6221 $0.6548 |