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Tokmas CSD18534Q5A(TOKMAS) product image
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Tokmas CSD18534Q5A(TOKMAS)RoHS

Manufacturer
TokmasAsian Brands
MPN
CSD18534Q5A(TOKMAS)
LCSC Part #
C19626241
Packaging
DFN-8(5x6)
Customer #
Key Attributes
MOSFET N-CH 60V 55A DFN-8(5x6)
Datasheetpdf iconTokmas CSD18534Q5A(TOKMAS)
In-Stock: 215
215 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2615$ 0.2354$ 1.18
50+$ 0.2066$ 0.1860$ 9.30
150+$ 0.183$ 0.1647$ 24.71
490+$ 0.1432$ 0.1289$ 63.16
2,450+$ 0.1301$ 0.1171$ 286.90
4,900+$ 0.1223$ 0.1101$ 539.49
Standard Packaging490/Full Tray
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTokmas
PackagingDFN-8(5x6)
Drain to Source Voltage60V
Output Capacitance(Coss)139pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)3.8pF
RDS(on)10mΩ
Number1 N-channel
Input Capacitance(Ciss)1.122nF
Gate Charge(Qg)18.4nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging490
Sales UnitPiece

Introduction

AI Translation

This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • VDS=60V, ID=55A, RDS(ON)<10mΩ@VGS=10V
  • Low gate charge
  • Green device available
  • Advanced high cell denity trench technology for ultra low RDS(ON)
  • Excellent package for good heat dissipation