Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 79pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 5.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 490pF | |
| Gate Charge(Qg) | 10nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 79pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 5.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 490pF | |
| Gate Charge(Qg) | 10nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- 100% guaranteed EAS compliance
- Ultra-low gate charge
- RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high-cell-density trench technology
In-Stock: 100,390
100,390 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0712 | $ 0.71 |
| 100+ | $ 0.0572 | $ 5.72 |
| 300+ | $ 0.0502 | $ 15.06 |
| 2,500+ | $ 0.043 | $ 107.50 |
| 5,000+ | $ 0.0388 | $ 194.00 |
| 10,000+ | $ 0.0367 | $ 367.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 79pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 5.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 490pF | |
| Gate Charge(Qg) | 10nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 79pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 5.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 490pF | |
| Gate Charge(Qg) | 10nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- 100% guaranteed EAS compliance
- Ultra-low gate charge
- RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high-cell-density trench technology
C19271469 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



