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VBsemi Elec SI4462DY-T1-E3-VB product image
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VBsemi Elec SI4462DY-T1-E3-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
SI4462DY-T1-E3-VB
LCSC Part #
C18795038
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH 200V 3A SO-8
Datasheetpdf iconVBsemi Elec SI4462DY-T1-E3-VB
In-Stock: 9
9 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5783$ 0.4916$ 0.49
10+$ 0.4594$ 0.3905$ 3.91
30+$ 0.408$ 0.3468$ 10.40
100+$ 0.3438$ 0.2923$ 29.23
500+$ 0.3149$ 0.2677$ 133.85
1,000+$ 0.2988$ 0.2540$ 254.00
Standard Packaging4000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingSO-8
Operating Temperature-55℃~+175℃
Drain to Source Voltage200V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)3A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)260mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
Gate Charge(Qg)34nC@10V
TypeN-Channel
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Features

AI Translation
  • Trench power MOSFET
  • Junction temperature 175 °C
  • Optimized for PWM
  • 100% gate resistance (Rg) tested
  • RoHS compliant (Directive 2002/95/EC)

Applications

AI Translation
  • Primary-side switch