RENESAS AT25QF641B-MHB-T

The Adesto AT25QF641B is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25QF641B also is ideal for data storage, eliminating the need for additional data storage devices. The AT25QF641B erase block sizes are optimized to meet the needs of today's code and data storage applications. This means memory space can be used much more efficiently. Because certain code modules and data storage segments must reside in their own erase regions, the wasted and unused memory space that occurs with large block erase Flash memory devices can be greatly reduced. This increased memory space allows additional code routines and data storage segments to be added, while maintaining the same overall device density. This device also contains three pages of Security Register that can be used for unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. These Security Register pages can be locked individually.

• Default Operating Mode is SPI Quad I/O
• Serial Peripheral Interface (SPI) Compatible - Supports SPI modes 0 and 3 (1,1,1) Supports dual input and dual output operation (1,1,2) Supports quad input and quad output operation (1,1,4) - Supports quad XiP (continuous read mode) operation (1,4,4 and 0,4,4)
• 104 MHz Maximum Operating Frequency
• Single 2.7 - 3.6 Single Supply Voltage
• Serial Flash Discoverable Parameters (SFDP, JDES216B) support
• OTP Memory - Three Protected Programmable Security Register Pages (Page size: 256 bytes) 64-bit factory programmable UID register
• Hardware Write Protection (WP pin)
• Software Write protection (Programmable non-volatile control registers)
• Program and Erase Suspend and Resume
• Byte programming size: up to 256 bytes
• Erase Size and Duration - Uniform 4-kbyte Block Erase (60 ms typical) Uniform 32-kbyte Block Erase (120 ms typical) Uniform 64-kbyte Block Erase (200 ms typical) - Full Chip Erase (25 seconds typical)
• Low-Power Dissipation Standby Current (25 μA maximum) Deep Power Down Current 5 μA maximum)
• Endurance: 100,000 Program and Erase Cycles
• Data Retention: 20 Years
• Industrial Temperature Range ( -40 ℃ to 85 ℃)
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options - 8-lead W-SOIC (0.208”) 8-pad Ultra-Thin DFN (5x6x0.6 mm) - Die Wafer Form - Other Package Options (contact Adesto)