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MICROCHIP AT49BV320D-70TU

Manufacturer
MICROCHIP
MPN
AT49BV320D-70TU
LCSC Part #
C184018
Packaging
TSOPI-48
Customer #
Key Attributes
32Mbit 2.65V~3.6V Parallel TSOPI-48 Memory
Datasheetpdf iconMICROCHIP AT49BV320D-70TU
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.8854$ 1.89
10+$ 1.8441$ 18.44
30+$ 1.8166$ 54.50
96+$ 1.7906$ 171.90
Standard Packaging96/Full Tray
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerMICROCHIP
PackagingTSOPI-48
Operating Temperature-40℃~+85℃
Features-
Memory Size32Mbit
Voltage - Supply2.65V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency-
Data Retention - TDR (Year)-
Block Erase Time(tBE)-
Page Programming Time (Tpp)-
Write Cycle Time(tWC)70ns
Standby Supply Current15uA
InterfaceParallel
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Introduction

AI Translation

The AT49BV320D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152 words of 16 bits each. The memory is divided into 71 sectors for erase operations. The device is offered in a 48-lead TSOP package and a 47-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector. To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The VPP pin provides data protection. When the V_PP input is below 0.4V, the program and erase functions are inhibited. When V_PP is at 1.65V or above, normal program and erase operations can be performed. With V_PP at 10.0V, the program (Dual-word Program command) operation is accelerated. 32-megabit (2M x 16) 3-volt Only Flash Memory

Features

AI Translation
  • Single Voltage Read/Write Operation: 2.65V to 3.6V
  • Access Time – 70 ns
  • Sector Erase Architecture – Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
  • Fast Word Program Time – 10 μs
  • Fast Sector Erase Time – 100 ms
  • Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word
  • Low-power Operation – 10 mA Active – 0.15 μA Standby
  • VPP Pin for Write Protection and Accelerated Program Operation
  • WP Pin for Sector Protection
  • RESET Input for Device Initialization
  • Flexible Sector Protection
  • TSOP and CBGA Package Options
  • Top or Bottom Boot Block Configuration Available
  • 128-bit Protection Register
  • Minimum 100,000 Erase Cycles
  • Common Flash Interface (CFI)
  • Green (Pb/Halide-free) Packaging