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ST STP100N6F7RoHS

Manufacturer
ST
MPN
STP100N6F7
LCSC Part #
C183260
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 60V 100A TO-220
Datasheetpdf iconST STP100N6F7
In-Stock: 124
124 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.7367$ 1.74
10+$ 1.4508$ 14.51
50+$ 1.2949$ 64.75
100+$ 1.1178$ 111.78
500+$ 1.0398$ 519.90
1,000+$ 1.0041$ 1004.10
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Operating Temperature-55℃~+175℃
Drain to Source Voltage60V
Current - Continuous Drain(Id)100A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)86pF
RDS(on)5.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.98nF
Gate Charge(Qg)30nC@10V
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Introduction

AI Translation

This N-channel power MOSFET utilizes STripFET™ F7 technology, featuring an optimized trench gate structure that achieves ultra-low on-resistance while reducing internal capacitance and gate charge, enabling faster and more efficient switching operation.

Features

AI Translation
  • Among the lowest R<sub>DS(ON)</sub> in the market
  • Excellent figure of merit (FoM)
  • Low C<sub>rss</sub>/C<sub>iss</sub> ratio for EMI immunity
  • High avalanche ruggedness

Applications

AI Translation
  • Switching applications