Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-252 | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 134pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 98pF | |
| RDS(on) | 24mΩ@10V;30.4mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.026nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-252 | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 134pF | |
| Current - Continuous Drain(Id) | 30A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 98pF | |
| RDS(on) | 24mΩ@10V;30.4mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.026nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
10N06 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. The 10N06 is RoHS compliant, meets green product requirements, and has passed full-function reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- Available in eco-friendly devices
- Excellent dv/dt immunity
- Advanced high cell density trench technology
- 100% avalanche-rated guaranteed
In-Stock: 47,300
47,300 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2136 | $ 1.07 |
| 50+ | $ 0.1743 | $ 8.72 |
| 150+ | $ 0.1575 | $ 23.63 |
| 500+ | $ 0.1365 | $ 68.25 |
| 2,500+ | $ 0.1109 | $ 277.25 |
| 5,000+ | $ 0.1053 | $ 526.50 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-252 | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 134pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 98pF | |
| RDS(on) | 24mΩ@10V;30.4mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.026nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-252 | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 134pF | |
| Current - Continuous Drain(Id) | 30A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 98pF | |
| RDS(on) | 24mΩ@10V;30.4mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.026nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
10N06 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. The 10N06 is RoHS compliant, meets green product requirements, and has passed full-function reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- Available in eco-friendly devices
- Excellent dv/dt immunity
- Advanced high cell density trench technology
- 100% avalanche-rated guaranteed
C18164395 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



