- Rozkład pinów
- Obudowa
Zdjęcia poglądowe
Modele EDAEasyEDA
Nexperia BUK7Y6R0-60EX
| Producent | |
| Nr części prod. | BUK7Y6R0-60EX |
| Nr LCSC | C179355 |
| Opak. | SOT-669 |
| Numer Klienta | |
| Klucz. cechy | 60V 100A 4V 195W 6mΩ@10V 1 N-channel N-Channel SOT-669 Single FETs, MOSFETs RoHS |
| Karta Katalogowa |  Nexperia BUK7Y6R0-60EX |
| Części alternatywne | 4 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-669 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 471pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 195W | |
| Reverse Transfer Capacitance (Crss@Vds) | 343pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.021nF | |
| Gate Charge(Qg) | 45.4nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-669 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 471pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 195W | |
| Reverse Transfer Capacitance (Crss@Vds) | 343pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.021nF | |
| Gate Charge(Qg) | 45.4nC@10V | |
| Type | N-Channel |
Zgłoś błądPokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Standard-level N-channel MOSFET using TrenchMOS technology in LFPAK56 (Power SO8) package. This product is designed and qualified to AEC Q101 standard for high-performance automotive applications.
Funkcje
Tłumaczenie AI
- Q101 compliant
- Repetitive avalanche rated
- 175°C temperature rating for high thermal demand environments
- True standard-level gate with VGS(th) rated above 1 V at 175°C
Zastosowania
Tłumaczenie AI
- 12 V automotive systems
- Motor, lamp, and solenoid control
- Transmission control
- Ultra-high-performance power switching
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.6818 | $ 0.68 |
| 10+ | $ 0.5553 | $ 5.55 |
| 30+ | $ 0.4921 | $ 14.76 |
| 100+ | $ 0.4304 | $ 43.04 |
| 500+ | $ 0.3918 | $ 195.90 |
| 1,500+ | $ 0.3733 | $ 559.95 |
Standardowa Obudowa1500/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-669 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 471pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 195W | |
| Reverse Transfer Capacitance (Crss@Vds) | 343pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.021nF | |
| Gate Charge(Qg) | 45.4nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-669 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 471pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 195W | |
| Reverse Transfer Capacitance (Crss@Vds) | 343pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.021nF | |
| Gate Charge(Qg) | 45.4nC@10V | |
| Type | N-Channel |
Zgłoś błądPokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Standard-level N-channel MOSFET using TrenchMOS technology in LFPAK56 (Power SO8) package. This product is designed and qualified to AEC Q101 standard for high-performance automotive applications.
Funkcje
Tłumaczenie AI
- Q101 compliant
- Repetitive avalanche rated
- 175°C temperature rating for high thermal demand environments
- True standard-level gate with VGS(th) rated above 1 V at 175°C
Zastosowania
Tłumaczenie AI
- 12 V automotive systems
- Motor, lamp, and solenoid control
- Transmission control
- Ultra-high-performance power switching
C179355 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| BUK7Y7R2-60EX | Nexperia | SOT-669 | 26 | $ 1.0382 | ||
| BUK7Y7R8-80E | Nexperia | SOT-669 | 28 | $ 2.5995 | ||
| PSMN4R1-60YLX | Nexperia | SOT-669 | 0 | $ 0.6902 | ||
| PSMN8R0-80YLX | Nexperia | SOT-669 | 0 | $ 0.7558 |