Nexperia PMPB12UNE115
| Manufacturer | |
| MPN | PMPB12UNE115 |
| LCSC Part # | C17694185 |
| Packaging | - |
| Customer # | |
| Key Attributes | PMPB12UNE 20V, N-channel TrenchMOSFET |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Interface/Specialized | |
| Manufacturer | Nexperia | |
| Packaging | - | |
| Features | - | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Interface/Specialized | |
| Manufacturer | Nexperia | |
| Packaging | - |
| Type | Description | |
|---|---|---|
| Features | - | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Trench MOSFET technology
- Low threshold voltage
- Exposed drain pad for excellent thermal conduction
- Tin-plated 100% solderable side pads for optical solder inspection
- ElectroStatic Discharge (ESD) protection > 1 kV HBM
Applications
AI Translation
- LED driver
- Power management
- Low-side loadswitch
- Switching circuits
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.2911 | $ 0.29 |
| 200+ | $ 0.1162 | $ 23.24 |
| 500+ | $ 0.1123 | $ 56.15 |
| 1,000+ | $ 0.1104 | $ 110.40 |
Standard Packaging1/Full Bag | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Interface/Specialized | |
| Manufacturer | Nexperia | |
| Packaging | - | |
| Features | - | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Interface/Specialized | |
| Manufacturer | Nexperia | |
| Packaging | - |
| Type | Description | |
|---|---|---|
| Features | - | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Trench MOSFET technology
- Low threshold voltage
- Exposed drain pad for excellent thermal conduction
- Tin-plated 100% solderable side pads for optical solder inspection
- ElectroStatic Discharge (ESD) protection > 1 kV HBM
Applications
AI Translation
- LED driver
- Power management
- Low-side loadswitch
- Switching circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |

