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NTE Electronics NTE5592 product image
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NTE Electronics NTE5592RoHS

Manufacturer
NTE Electronics
MPN
NTE5592
LCSC Part #
C17680549
Packaging
TO-200AB
Customer #
Key Attributes
600mA 150mA 1.2kV One unidirectional thyristor TO-200AB TRIACs RoHS
Datasheetpdf iconNTE Electronics NTE5592
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QtyUnit Price(Reference Only)Total Amount
1+$ 478.2273$ 478.23
200+$ 190.8169$ 38163.38
500+$ 184.4401$ 92220.05
1,000+$ 181.2896$ 181289.60
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Thyristors/TRIACs
ManufacturerNTE Electronics
PackagingTO-200AB
Operating Temperature-40℃~+125℃
Holding Current (Ih)600mA
Current - Gate Trigger(Igt)150mA
Voltage - On State(Vtm)1.75V
Current - On State(It(RMS))780A
Peak off - state voltage(Vdrm)1.2kV
SCR TypeOne unidirectional thyristor
Gate Trigger Voltage (Vgt)3V
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Features

AI Translation
  • Repetitive peak voltage: NTE5590 200V, NTE5591 600V, NTE5592 1200V, NTE5597 1600V
  • Non-repetitive peak reverse blocking voltage: NTE5590 300V, NTE5591 700V, NTE5592 1300V, NTE5597 1700V
  • Average on-state current: 470A with double-side cooling (heatsink temperature +55℃), 160A with single-side cooling (heatsink temperature +85℃)
  • RMS on-state current: 780A (double-side cooling, heatsink temperature +25℃)
  • Continuous on-state current: 668A (double-side cooling, heatsink temperature +25℃)
  • Peak single-cycle surge current: 4650A (10ms duration)
  • Non-repetitive on-state current: 5120A (10ms duration)
  • Maximum allowable surge energy: 131000A²s at 10ms duration, 97350A²s at 3ms duration
  • Peak forward gate current: 19A
  • Peak forward gate voltage: 18V
  • Peak reverse gate voltage: 5V
  • Average gate power: 2W
  • Peak gate power: 100W (100μs pulse width)
  • Off-state voltage rise rate: 200V/μs
  • On-state current rise rate: repetitive 500A/μs, non-repetitive 1000A/μs
  • Operating temperature range: -40℃ to +125℃
  • Storage temperature range: -40℃ to +150℃
  • Thermal resistance, junction to heatsink: 0.095℃/W double-side cooling, 0.190℃/W single-side cooling
  • Peak on-state voltage: 1.75V (ITM=840A)
  • Forward conduction threshold voltage: 0.92V
  • Forward conduction slope resistance: 0.99mΩ
  • Repetitive peak off-state current: 20mA
  • Repetitive peak reverse current: 20mA
  • Maximum gate current: 150mA
  • Maximum gate voltage: 3V
  • Maximum holding current: 600mA
  • Maximum non-triggering gate voltage: 0.25V