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NTE Electronics NTE5511
| Manufacturer | |
| MPN | NTE5511 |
| LCSC Part # | C17679781 |
| Packaging | TO-66 |
| Customer # | |
| Key Attributes | 20mA 15mA 200V One unidirectional thyristor TO-66 TRIACs |
| Datasheet |  NTE Electronics NTE5511 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Thyristors/TRIACs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-66 | |
| Operating Temperature | -40℃~+100℃ | |
| Holding Current (Ih) | 20mA | |
| Current - Gate Trigger(Igt) | 15mA | |
| Current - On State(It(RMS)) | 5A | |
| Peak off - state voltage(Vdrm) | 200V | |
| SCR Type | One unidirectional thyristor | |
| Gate Trigger Voltage (Vgt) | 2V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Thyristors/TRIACs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-66 | |
| Operating Temperature | -40℃~+100℃ | |
| Holding Current (Ih) | 20mA |
| Type | Description | |
|---|---|---|
| Current - Gate Trigger(Igt) | 15mA | |
| Current - On State(It(RMS)) | 5A | |
| Peak off - state voltage(Vdrm) | 200V | |
| SCR Type | One unidirectional thyristor | |
| Gate Trigger Voltage (Vgt) | 2V |
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Introduction
AI Translation
The NTE5511 through NTE5513 are full-diffused, three-junction silicon controlled rectifiers (SCRs) designed for power control and power switching applications. These devices are housed in a TO-66 package with blocking voltage capability up to 600V and a forward current rating of 5A (RMS) at a case temperature of +75°C.
Features
AI Translation
- Designed for high-capacity systems
- Easy adaptation to PCBs and metal heat sinks
- Low switching losses
- High di/dt and dv/dt capability
- Gate-cathode structure with emitter short
- Forward and reverse gate dissipation ratings
- All-diffused structure ensures excellent uniformity and stability of characteristics
- Direct-bonded internal structure ensures excellent fatigue resistance
- Symmetrical gate-cathode structure provides uniform current density, fast turn-on performance, and efficient heat dissipation
- All-welded construction and hermetic package
- Low forward and reverse leakage current
- Low forward voltage drop at high current levels
- Low thermal resistance
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 23.7047 | $ 23.70 |
| 200+ | $ 9.4592 | $ 1891.84 |
| 500+ | $ 9.1426 | $ 4571.30 |
| 1,000+ | $ 8.9866 | $ 8986.60 |
Standard Packaging1/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Thyristors/TRIACs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-66 | |
| Operating Temperature | -40℃~+100℃ | |
| Holding Current (Ih) | 20mA | |
| Current - Gate Trigger(Igt) | 15mA | |
| Current - On State(It(RMS)) | 5A | |
| Peak off - state voltage(Vdrm) | 200V | |
| SCR Type | One unidirectional thyristor | |
| Gate Trigger Voltage (Vgt) | 2V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Thyristors/TRIACs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-66 | |
| Operating Temperature | -40℃~+100℃ | |
| Holding Current (Ih) | 20mA |
| Type | Description | |
|---|---|---|
| Current - Gate Trigger(Igt) | 15mA | |
| Current - On State(It(RMS)) | 5A | |
| Peak off - state voltage(Vdrm) | 200V | |
| SCR Type | One unidirectional thyristor | |
| Gate Trigger Voltage (Vgt) | 2V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The NTE5511 through NTE5513 are full-diffused, three-junction silicon controlled rectifiers (SCRs) designed for power control and power switching applications. These devices are housed in a TO-66 package with blocking voltage capability up to 600V and a forward current rating of 5A (RMS) at a case temperature of +75°C.
Features
AI Translation
- Designed for high-capacity systems
- Easy adaptation to PCBs and metal heat sinks
- Low switching losses
- High di/dt and dv/dt capability
- Gate-cathode structure with emitter short
- Forward and reverse gate dissipation ratings
- All-diffused structure ensures excellent uniformity and stability of characteristics
- Direct-bonded internal structure ensures excellent fatigue resistance
- Symmetrical gate-cathode structure provides uniform current density, fast turn-on performance, and efficient heat dissipation
- All-welded construction and hermetic package
- Low forward and reverse leakage current
- Low forward voltage drop at high current levels
- Low thermal resistance
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541300000 |
| USHTS | 8541300080 |
| TARIC | 8541300000 |
| CAHTS | 8541300000 |
| BRHTS | 85413019 |
| INHTS | 85413010 |
| MXHTS | 8541.30.01 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541300000 |
| USHTS | 8541300080 |
| TARIC | 8541300000 |
| Type | Details |
|---|---|
| CAHTS | 8541300000 |
| BRHTS | 85413019 |
| INHTS | 85413010 |
| MXHTS | 8541.30.01 |