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NTE Electronics NTE5496
| Manufacturer | |
| MPN | NTE5496 |
| LCSC Part # | C17677380 |
| Packaging | TO-48 |
| Customer # | |
| Key Attributes | 50mA 1.2A 600V One unidirectional thyristor TO-48 TRIACs RoHS |
| Datasheet |  NTE Electronics NTE5496 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Thyristors/TRIACs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-48 | |
| Operating Temperature | -65℃~+125℃ | |
| Holding Current (Ih) | 50mA | |
| Current - Gate Trigger(Igt) | 1.2A | |
| Voltage - On State(Vtm) | 2V | |
| Current - On State(It(RMS)) | 25A | |
| Peak off - state voltage(Vdrm) | 600V | |
| SCR Type | One unidirectional thyristor | |
| Gate Trigger Voltage (Vgt) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Thyristors/TRIACs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-48 | |
| Operating Temperature | -65℃~+125℃ | |
| Holding Current (Ih) | 50mA | |
| Current - Gate Trigger(Igt) | 1.2A |
| Type | Description | |
|---|---|---|
| Voltage - On State(Vtm) | 2V | |
| Current - On State(It(RMS)) | 25A | |
| Peak off - state voltage(Vdrm) | 600V | |
| SCR Type | One unidirectional thyristor | |
| Gate Trigger Voltage (Vgt) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
NTE5491 through NTE5496 are silicon controlled rectifiers designed primarily for half-wave AC control applications such as motor control, heating control, power supplies, or anywhere a half-wave silicon gate-controlled solid-state device is required.
Features
AI Translation
- Glass passivated junction and center gate firing for enhanced parameter uniformity and stability
- Blocking voltage up to 600V
- Repetitive peak off-state blocking voltage VRRM, VDRM: NTE5491 = 100V, NTE5492 = 200V, NTE5494 = 400V, NTE5496 = 600V
- Non-repetitive peak reverse voltage VRSM: NTE5491 = 150V, NTE5492 = 300V, NTE5494 = 500V, NTE5496 = 720V
- RMS on-state current IT(RMS) (all conduction angles): 25A
- Average on-state current IT(AV) (Tc = +65°C): 16A
- Non-repetitive peak surge current ITSM (one cycle, 60Hz, preceded and followed by rated current and voltage): 150A
- Circuit fusing consideration (Tj = -40°C to +125°C, t = 0 to 8.3ms), I²t = 93A²s
- Peak gate power dissipation PGM: 5W
- Average gate power dissipation PG(AV): 500mW
- Peak forward gate current IGT: NTE5491, NTE5492, NTE5494 = 2.0A; NTE5496 = 1.2A
- Operating junction temperature range TJ: -65°C to +125°C
- Storage temperature range Tstg: -65°C to +150°C
- Typical thermal resistance, junction-to-case RthJC: 2°C/W
- Stud torque: 30 in·lb
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 24.0742 | $ 24.07 |
| 200+ | $ 9.6061 | $ 1921.22 |
| 500+ | $ 9.285 | $ 4642.50 |
| 1,000+ | $ 9.1275 | $ 9127.50 |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Thyristors/TRIACs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-48 | |
| Operating Temperature | -65℃~+125℃ | |
| Holding Current (Ih) | 50mA | |
| Current - Gate Trigger(Igt) | 1.2A | |
| Voltage - On State(Vtm) | 2V | |
| Current - On State(It(RMS)) | 25A | |
| Peak off - state voltage(Vdrm) | 600V | |
| SCR Type | One unidirectional thyristor | |
| Gate Trigger Voltage (Vgt) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Thyristors/TRIACs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-48 | |
| Operating Temperature | -65℃~+125℃ | |
| Holding Current (Ih) | 50mA | |
| Current - Gate Trigger(Igt) | 1.2A |
| Type | Description | |
|---|---|---|
| Voltage - On State(Vtm) | 2V | |
| Current - On State(It(RMS)) | 25A | |
| Peak off - state voltage(Vdrm) | 600V | |
| SCR Type | One unidirectional thyristor | |
| Gate Trigger Voltage (Vgt) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
NTE5491 through NTE5496 are silicon controlled rectifiers designed primarily for half-wave AC control applications such as motor control, heating control, power supplies, or anywhere a half-wave silicon gate-controlled solid-state device is required.
Features
AI Translation
- Glass passivated junction and center gate firing for enhanced parameter uniformity and stability
- Blocking voltage up to 600V
- Repetitive peak off-state blocking voltage VRRM, VDRM: NTE5491 = 100V, NTE5492 = 200V, NTE5494 = 400V, NTE5496 = 600V
- Non-repetitive peak reverse voltage VRSM: NTE5491 = 150V, NTE5492 = 300V, NTE5494 = 500V, NTE5496 = 720V
- RMS on-state current IT(RMS) (all conduction angles): 25A
- Average on-state current IT(AV) (Tc = +65°C): 16A
- Non-repetitive peak surge current ITSM (one cycle, 60Hz, preceded and followed by rated current and voltage): 150A
- Circuit fusing consideration (Tj = -40°C to +125°C, t = 0 to 8.3ms), I²t = 93A²s
- Peak gate power dissipation PGM: 5W
- Average gate power dissipation PG(AV): 500mW
- Peak forward gate current IGT: NTE5491, NTE5492, NTE5494 = 2.0A; NTE5496 = 1.2A
- Operating junction temperature range TJ: -65°C to +125°C
- Storage temperature range Tstg: -65°C to +150°C
- Typical thermal resistance, junction-to-case RthJC: 2°C/W
- Stud torque: 30 in·lb
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541300000 |
| USHTS | 8541300080 |
| TARIC | 8541300000 |
| CAHTS | 8541300000 |
| BRHTS | 85413019 |
| INHTS | 85413010 |
| MXHTS | 8541.30.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541300000 |
| USHTS | 8541300080 |
| TARIC | 8541300000 |
| Type | Details |
|---|---|
| CAHTS | 8541300000 |
| BRHTS | 85413019 |
| INHTS | 85413010 |
| MXHTS | 8541.30.01 |