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AOS AOD5B65M1RoHS

Manufacturer
AOS
MPN
AOD5B65M1
LCSC Part #
C176752
Packaging
TO-252
Customer #
Key Attributes
IGBT 650V 10A TO-252
Datasheetpdf iconAOS AOD5B65M1
In-Stock: 47
47 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.7518$ 0.75
10+$ 0.5995$ 6.00
30+$ 0.5242$ 15.73
100+$ 0.4472$ 44.72
500+$ 0.4024$ 201.20
1,000+$ 0.3799$ 379.90
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerAOS
PackagingTO-252
Td(off)106ns
Pd - Power Dissipation28W
Td(on)8.5ns
Current - Collector(Ic)10A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)13pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@1mA
Operating Temperature-55℃~+150℃@(Tj)
Vce Saturation(VCE(sat))1.98V@5A,15V
Collector Cut-Off Current (Ices)-
Reverse Recovery Time(trr)195ns
Switching Energy(Eoff)70uJ
Turn-On Energy (Eon)80uJ
Input Capacitance(Cies)348pF
Output Capacitance(Coes)36pF
Gate Charge(Qg)14nC
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Introduction

AI Translation
  • Latest AlphaIGBT (α IGBT) technology
  • 650V breakdown voltage
  • Very fast and soft recovery freewheeling diode
  • High efficient turn-on di/dt controllability
  • Low VCE(SAT) enables high efficiencies
  • Low turn-off switching loss and softness
  • Very good EMI behavior
  • High short-circuit ruggedness