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NTE Electronics NTE5551 product image
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NTE Electronics NTE5551RoHS

Manufacturer
NTE Electronics
MPN
NTE5551
LCSC Part #
C17654220
Packaging
TO-200AB
Customer #
Key Attributes
600mA 150mA 600V One unidirectional thyristor TO-200AB TRIACs RoHS
Datasheetpdf iconNTE Electronics NTE5551
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QtyUnit Price(Reference Only)Total Amount
1+$ 259.7617$ 259.76
200+$ 103.6475$ 20729.50
500+$ 100.1835$ 50091.75
1,000+$ 98.4719$ 98471.90
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Thyristors/TRIACs
ManufacturerNTE Electronics
PackagingTO-200AB
Operating Temperature-40℃~+125℃
Holding Current (Ih)600mA
Current - Gate Trigger(Igt)150mA
Voltage - On State(Vtm)1.75V
Current - On State(It(RMS))780A
Peak off - state voltage(Vdrm)600V
SCR TypeOne unidirectional thyristor
Gate Trigger Voltage (Vgt)3V
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Features

AI Translation
  • Repetitive peak voltages, VRRM, VDRM, VDSM: 600V for NTE5551, 1600V for NTE5553
  • Non-repetitive peak reverse blocking voltage, VRSM: 700V for NTE5551, 1700V for NTE5553
  • Average on-state current (half sine wave), IT(AV): 390A at Ths = +55°C (double-side cooling), 160A at Ths = +85°C (single-side cooling)
  • RMS on-state current (Ths = +25°C, double-side cooling), IT(RMS): 780A
  • Continuous on-state current (Ths = +25°C, double-side cooling), IT: 668A
  • Single-cycle surge peak (10ms duration, Δ50% VABM reapplied), ITSM (1): 4650A
  • Non-repetitive on-state current (10ms duration, VR ≤ 10V), ITSM (2): 5120A
  • Maximum allowable surge energy (VR ≤ 10V), I²t: 131000A²s at 10ms duration, 97350A²s at 3ms duration
  • Peak forward gate current (anode positive with respect to cathode), IFGM: 19A
  • Peak forward gate voltage (anode positive with respect to cathode), VFGM: 18V
  • Peak reverse gate voltage, VRGM: 5V
  • Average gate power, PG: 2W
  • Peak gate power (100μs pulse width), PGM: 100W
  • Off-state voltage rate of rise (to 80% VDRM, gate open), dv/dt: 200V/μs
  • On-state current rate of rise, di/dt (gate drive 20V, 20Ω, tr ≤ 1μs, anode voltage ≤ 80% VDRM): repetitive 500A/μs, non-repetitive 1000A/μs
  • Operating temperature range, Ths: -40°C to +125°C
  • Storage temperature range, Tstg: -40°C to +150°C
  • Thermal resistance, junction to heatsink, Rth(j-hs) (for devices with maximum forward voltage drop characteristics): double-side cooling 0.095°C/W, single-side cooling 0.190°C/W
  • Peak on-state voltage (ITM = 840A), VTM: 1.75V
  • Forward threshold voltage, V0: 0.92V
  • Forward slope resistance, r: 0.99mΩ
  • Repetitive peak off-state current (at VDRM), IDRM: 20mA
  • Repetitive peak reverse current (at VRRM), IRRM: 20mA
  • Maximum gate current (VA = 6V, IA = 1A, TJ = +25°C), IGT: 150mA
  • Maximum gate voltage (VA = 6V, IA = 1A, TJ = +25°C), VGT: 3V
  • Maximum holding current (VA = 6V, IA = 1A, TJ = +25°C), IH: 600mA
  • Maximum gate voltage not triggering any device, VGD: 0.25V