NTE Electronics NTE133
| Manufacturer | |
| MPN | NTE133 |
| LCSC Part # | C17617864 |
| Packaging | TO-106 |
| Customer # | |
| Key Attributes | 500uA 300mW 1 N-channel 25V TO-106 JFETs |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-106 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | - | |
| Drain Current (Idss) | 500uA | |
| Pd - Power Dissipation | 300mW | |
| Number | 1 N-channel | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -55℃~+150℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 6.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-106 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | - | |
| Drain Current (Idss) | 500uA | |
| Pd - Power Dissipation | 300mW | |
| Number | 1 N-channel |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -55℃~+150℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 6.5V |
Introduction
NTE133 is an N-channel junction field-effect transistor for general-purpose audio amplifier applications, housed in a TO106 package. Drain-source voltage is 25V, drain-gate voltage is 25V, gate-source voltage is -25V, gate current is 10mA, total device dissipation (at ambient temperature of +25℃) is 300mW, derating factor above 25℃ is 2mW/℃, operating junction temperature range is -55℃ to +150℃, storage temperature range is -55℃ to +150℃, and lead temperature (during soldering, at 1/16 inch from case body for 10 seconds) is +260℃.
Features
- Drain-Source Voltage: 25V
- Drain-Gate Voltage: 25V
- Gate-Source Voltage: -25V
- Gate Current: 10mA
- Total Device Dissipation (Ta = +25℃): 300mW
- Derate Above 25℃: 2mW/℃
- Operating Junction Temperature Range: -55℃ to +150℃
- Storage Temperature Range: -55℃ to +150℃
- Lead Temperature (Soldering, 1/16 inch from case for 10 seconds): +260℃
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 11.0859 | $ 11.09 |
| 200+ | $ 4.4229 | $ 884.58 |
| 500+ | $ 4.276 | $ 2138.00 |
| 1,000+ | $ 4.2033 | $ 4203.30 |
Standard Packaging1/Full Bag | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-106 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | - | |
| Drain Current (Idss) | 500uA | |
| Pd - Power Dissipation | 300mW | |
| Number | 1 N-channel | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -55℃~+150℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 6.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-106 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | - | |
| Drain Current (Idss) | 500uA | |
| Pd - Power Dissipation | 300mW | |
| Number | 1 N-channel |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -55℃~+150℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 6.5V |
Introduction
NTE133 is an N-channel junction field-effect transistor for general-purpose audio amplifier applications, housed in a TO106 package. Drain-source voltage is 25V, drain-gate voltage is 25V, gate-source voltage is -25V, gate current is 10mA, total device dissipation (at ambient temperature of +25℃) is 300mW, derating factor above 25℃ is 2mW/℃, operating junction temperature range is -55℃ to +150℃, storage temperature range is -55℃ to +150℃, and lead temperature (during soldering, at 1/16 inch from case body for 10 seconds) is +260℃.
Features
- Drain-Source Voltage: 25V
- Drain-Gate Voltage: 25V
- Gate-Source Voltage: -25V
- Gate Current: 10mA
- Total Device Dissipation (Ta = +25℃): 300mW
- Derate Above 25℃: 2mW/℃
- Operating Junction Temperature Range: -55℃ to +150℃
- Storage Temperature Range: -55℃ to +150℃
- Lead Temperature (Soldering, 1/16 inch from case for 10 seconds): +260℃
C17617864 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

