LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
NTE Electronics NTE133 product image
Images for reference only

NTE Electronics NTE133

Manufacturer
MPN
NTE133
LCSC Part #
C17617864
Packaging
TO-106
Customer #
Key Attributes
500uA 300mW 1 N-channel 25V TO-106 JFETs
Datasheetpdf iconNTE Electronics NTE133
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit Price(Reference Only)Total Amount
1+$ 11.0859$ 11.09
200+$ 4.4229$ 884.58
500+$ 4.276$ 2138.00
1,000+$ 4.2033$ 4203.30
Standard Packaging1/Full Bag
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/JFETs
ManufacturerNTE Electronics
PackagingTO-106
FET TypeN-Channel
Ciss-Input Capacitance-
Drain Current (Idss)500uA
Pd - Power Dissipation300mW
Number1 N-channel
Reverse Transfer Capacitance (Crss)-
Configuration-
RDS(on)-
operating temperature-55℃~+150℃
Gate-Source Breakdown Voltage (Vgss)25V
Output Capacitance(Coss)-
Gate-Source Cutoff Voltage (VGS(off))6.5V

Introduction

AI Translation

NTE133 is an N-channel junction field-effect transistor for general-purpose audio amplifier applications, housed in a TO106 package. Drain-source voltage is 25V, drain-gate voltage is 25V, gate-source voltage is -25V, gate current is 10mA, total device dissipation (at ambient temperature of +25℃) is 300mW, derating factor above 25℃ is 2mW/℃, operating junction temperature range is -55℃ to +150℃, storage temperature range is -55℃ to +150℃, and lead temperature (during soldering, at 1/16 inch from case body for 10 seconds) is +260℃.

Features

AI Translation
  • Drain-Source Voltage: 25V
  • Drain-Gate Voltage: 25V
  • Gate-Source Voltage: -25V
  • Gate Current: 10mA
  • Total Device Dissipation (Ta = +25℃): 300mW
  • Derate Above 25℃: 2mW/℃
  • Operating Junction Temperature Range: -55℃ to +150℃
  • Storage Temperature Range: -55℃ to +150℃
  • Lead Temperature (Soldering, 1/16 inch from case for 10 seconds): +260℃