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NTE Electronics NTE5523
| Manufacturer | |
| MPN | NTE5523 |
| LCSC Part # | C17610367 |
| Packaging | TO-48 |
| Customer # | |
| Key Attributes | 40mA 150V One unidirectional thyristor TO-48 TRIACs |
| Datasheet |  NTE Electronics NTE5523 |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Thyristors/TRIACs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-48 | |
| Holding Current (Ih) | - | |
| Operating Temperature | -65℃~+125℃ | |
| Current - Gate Trigger(Igt) | 40mA | |
| Voltage - On State(Vtm) | 1.7V | |
| Average Gate Power Dissipation (PG(AV)) | 500mW | |
| Current - On State(It(RMS)) | 25A | |
| Peak off - state voltage(Vdrm) | 150V | |
| Current - Surge(Itsm@f) | 150A | |
| SCR Type | One unidirectional thyristor | |
| Gate Trigger Voltage (Vgt) | 3V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Thyristors/TRIACs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-48 | |
| Holding Current (Ih) | - | |
| Operating Temperature | -65℃~+125℃ | |
| Current - Gate Trigger(Igt) | 40mA | |
| Voltage - On State(Vtm) | 1.7V |
| Type | Description | |
|---|---|---|
| Average Gate Power Dissipation (PG(AV)) | 500mW | |
| Current - On State(It(RMS)) | 25A | |
| Peak off - state voltage(Vdrm) | 150V | |
| Current - Surge(Itsm@f) | 150A | |
| SCR Type | One unidirectional thyristor | |
| Gate Trigger Voltage (Vgt) | 3V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Blocking State (TJ = +125°C unless otherwise specified): Repetitive peak forward and reverse voltage — NTE5520: 25V, NTE5521: 50V, NTE5522: 100V, NTE5523: 150V, NTE5524: 200V, NTE5525: 250V, NTE5526: 300V, NTE5527: 400V, NTE5528: 500V, NTE5529: 600V, NTE5530: 700V, NTE5531: 800V; Non-repetitive transient peak forward and reverse voltage (t ≤ 5.0msec) — NTE5520: 35V, NTE5521: 75V, NTE5522: 150V, NTE5523: 225V, NTE5524: 300V, NTE5525: 350V, NTE5526: 400V, NTE5527: 500V, NTE5528: 600V, NTE5529: 780V, NTE5530: 840V, NTE5531: 960V; Forward and reverse leakage current (full-cycle average) — NTE5520: 6.5mA, NTE5521: 6.5mA, NTE5522: 6.5mA, NTE5523: 6.5mA, NTE5524: 6.0mA, NTE5525: 5.5mA, NTE5526: 5.0mA, NTE5527: 4.0mA, NTE5528: 3.0mA, NTE5529: 2.5mA, NTE5530: 2.25mA, NTE5531: 2.0mA
- On-State (TJ = +125°C unless otherwise specified): RMS forward current: 25A; Forward current (180° conduction): 16A; 60Hz half-wave surge I²t: 90A²sec; Forward voltage drop at TJ = +25°C (IF = 16A DC): 1.7V; Operating junction temperature range: -65°C to +125°C; Storage temperature range: -65°C to +150°C; Maximum thermal resistance (junction-to-case): 1.3°C/W; Maximum stud torque (lubricated): 30 inch-pounds
- Gate Parameters (TJ = +25°C unless otherwise specified): Gate trigger current (VFB = 12V): 40mA; Gate trigger voltage over temperature range (VFB = 12V): 3.0V; Non-trigger gate voltage at TJ = +125°C (rated VFB): 0.25V; Peak forward gate current: 5A; Peak reverse gate voltage: 5V; Peak gate power: 5W; Average gate power: 0.5W
- Typical turn-on time (IT = 10A, 10–90%, VDRM = 10V, TJ = +25°C): 3μs; Minimum di/dt (linear to 5.0IT(av)): 25A/μs; Typical turn-off time (IT = 10A, TJ = +125°C, diR/dt = 10A/μs, dv/dt = 20V/μs, linear to 0.8VDRM): 50μs; Typical dv/dt (to VDRM): 100V/μs
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 25.9009 | $ 25.90 |
| 200+ | $ 10.3347 | $ 2066.94 |
| 500+ | $ 9.9893 | $ 4994.65 |
| 1,000+ | $ 9.8182 | $ 9818.20 |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Thyristors/TRIACs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-48 | |
| Holding Current (Ih) | - | |
| Operating Temperature | -65℃~+125℃ | |
| Current - Gate Trigger(Igt) | 40mA | |
| Voltage - On State(Vtm) | 1.7V | |
| Average Gate Power Dissipation (PG(AV)) | 500mW | |
| Current - On State(It(RMS)) | 25A | |
| Peak off - state voltage(Vdrm) | 150V | |
| Current - Surge(Itsm@f) | 150A | |
| SCR Type | One unidirectional thyristor | |
| Gate Trigger Voltage (Vgt) | 3V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Thyristors/TRIACs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-48 | |
| Holding Current (Ih) | - | |
| Operating Temperature | -65℃~+125℃ | |
| Current - Gate Trigger(Igt) | 40mA | |
| Voltage - On State(Vtm) | 1.7V |
| Type | Description | |
|---|---|---|
| Average Gate Power Dissipation (PG(AV)) | 500mW | |
| Current - On State(It(RMS)) | 25A | |
| Peak off - state voltage(Vdrm) | 150V | |
| Current - Surge(Itsm@f) | 150A | |
| SCR Type | One unidirectional thyristor | |
| Gate Trigger Voltage (Vgt) | 3V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Blocking State (TJ = +125°C unless otherwise specified): Repetitive peak forward and reverse voltage — NTE5520: 25V, NTE5521: 50V, NTE5522: 100V, NTE5523: 150V, NTE5524: 200V, NTE5525: 250V, NTE5526: 300V, NTE5527: 400V, NTE5528: 500V, NTE5529: 600V, NTE5530: 700V, NTE5531: 800V; Non-repetitive transient peak forward and reverse voltage (t ≤ 5.0msec) — NTE5520: 35V, NTE5521: 75V, NTE5522: 150V, NTE5523: 225V, NTE5524: 300V, NTE5525: 350V, NTE5526: 400V, NTE5527: 500V, NTE5528: 600V, NTE5529: 780V, NTE5530: 840V, NTE5531: 960V; Forward and reverse leakage current (full-cycle average) — NTE5520: 6.5mA, NTE5521: 6.5mA, NTE5522: 6.5mA, NTE5523: 6.5mA, NTE5524: 6.0mA, NTE5525: 5.5mA, NTE5526: 5.0mA, NTE5527: 4.0mA, NTE5528: 3.0mA, NTE5529: 2.5mA, NTE5530: 2.25mA, NTE5531: 2.0mA
- On-State (TJ = +125°C unless otherwise specified): RMS forward current: 25A; Forward current (180° conduction): 16A; 60Hz half-wave surge I²t: 90A²sec; Forward voltage drop at TJ = +25°C (IF = 16A DC): 1.7V; Operating junction temperature range: -65°C to +125°C; Storage temperature range: -65°C to +150°C; Maximum thermal resistance (junction-to-case): 1.3°C/W; Maximum stud torque (lubricated): 30 inch-pounds
- Gate Parameters (TJ = +25°C unless otherwise specified): Gate trigger current (VFB = 12V): 40mA; Gate trigger voltage over temperature range (VFB = 12V): 3.0V; Non-trigger gate voltage at TJ = +125°C (rated VFB): 0.25V; Peak forward gate current: 5A; Peak reverse gate voltage: 5V; Peak gate power: 5W; Average gate power: 0.5W
- Typical turn-on time (IT = 10A, 10–90%, VDRM = 10V, TJ = +25°C): 3μs; Minimum di/dt (linear to 5.0IT(av)): 25A/μs; Typical turn-off time (IT = 10A, TJ = +125°C, diR/dt = 10A/μs, dv/dt = 20V/μs, linear to 0.8VDRM): 50μs; Typical dv/dt (to VDRM): 100V/μs
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541300000 |
| USHTS | 8541300080 |
| TARIC | 8541300000 |
| CAHTS | 8541300000 |
| BRHTS | 85413019 |
| INHTS | 85413010 |
| MXHTS | 8541.30.01 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541300000 |
| USHTS | 8541300080 |
| TARIC | 8541300000 |
| Type | Details |
|---|---|
| CAHTS | 8541300000 |
| BRHTS | 85413019 |
| INHTS | 85413010 |
| MXHTS | 8541.30.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NTE5524 | NTE Electronics | TO-48 | 0 | $ 50.7037 | ||
| NTE5526 | NTE Electronics | TO-48 | 0 | $ 52.7288 | ||
| NTE5527 | NTE Electronics | TO-48 | 0 | $ 55.7521 | ||
| NTE5528 | NTE Electronics | TO-48 | 0 | $ 58.8057 | ||
| NTE5529 | NTE Electronics | TO-48 | 0 | $ 55.0008 | ||
| NTE5530 | NTE Electronics | TO-48 | 0 | $ 57.6727 | ||
| NTE5503 | NTE Electronics | TO-48 | 0 | $ 40.001 | ||
| NTE5504 | NTE Electronics | TO-48 | 0 | $ 48.1333 | ||
| NTE5505 | NTE Electronics | TO-48 | 0 | $ 44.3663 | ||
| NTE5507 | NTE Electronics | TO-48 | 0 | $ 46.5611 |