pSemi PE42540G-Z
| Manufacturer | |
| MPN | PE42540G-Z |
| LCSC Part # | C17553633 |
| Packaging | LGA-32(5x5) |
| Customer # | |
| Key Attributes | 10Hzto8GHzSP4TRFSwitch |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | LGA-32(5x5) | |
| Frequency range | 10Hz~8GHz | |
| Features | Integrated control logic | |
| Voltage - Supply | 3V~3.55V | |
| P1dB | 33dBm | |
| operating temperature | -40℃~+85℃ |
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | LGA-32(5x5) | |
| Frequency range | 10Hz~8GHz |
| Type | Description | |
|---|---|---|
| Features | Integrated control logic | |
| Voltage - Supply | 3V~3.55V | |
| P1dB | 33dBm | |
| operating temperature | -40℃~+85℃ |
Introduction
The PE42540 is a HaRP™ technology-enhanced absorptive SP4T RF switch developed on UltraCMOS® process technology. This switch is designed specifically to support the requirements of the test equipment and ATE market. It comprises four symmetric RF ports and has very high isolation. An on-chip CMOS decode logic facilitates a two-pin low voltage CMOS control interface and an optional external VSS feature. High ESD tolerance and no blocking capacitor requirements make this the ultimate in integration and ruggedness. The PE42540 is manufactured on PSemi’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. UltraCMOS® SP4T RF Switch 10 Hz–8 GHz
Features
- HaRP™ technology enhanced
- Fast settling time Eliminates gate and phase lag No drift in insertion loss and phase
- High linearity: 58 dBm IIP3
- Low insertion loss: 0.8 dB @ 3 GHz, 1.0 dB @ 6 GHz and 1.2 dB @ 8 GHz
- High isolation: 45 dB @ 3 GHz, 39 dB @ 6 GHz and 31 dB @ 8 GHz
- Maximum power handling: 30 dBm @ 8 GHz
- High ESD tolerance of 2 kV HBM on RFC and 1 kV HBM on all other pins
Applications
- test equipment
- ATE market
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 9.2875 | $ 9.29 |
| 10+ | $ 8.0479 | $ 80.48 |
| 30+ | $ 7.293 | $ 218.79 |
| 100+ | $ 6.6602 | $ 666.02 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | LGA-32(5x5) | |
| Frequency range | 10Hz~8GHz | |
| Features | Integrated control logic | |
| Voltage - Supply | 3V~3.55V | |
| P1dB | 33dBm | |
| operating temperature | -40℃~+85℃ |
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | LGA-32(5x5) | |
| Frequency range | 10Hz~8GHz |
| Type | Description | |
|---|---|---|
| Features | Integrated control logic | |
| Voltage - Supply | 3V~3.55V | |
| P1dB | 33dBm | |
| operating temperature | -40℃~+85℃ |
Introduction
The PE42540 is a HaRP™ technology-enhanced absorptive SP4T RF switch developed on UltraCMOS® process technology. This switch is designed specifically to support the requirements of the test equipment and ATE market. It comprises four symmetric RF ports and has very high isolation. An on-chip CMOS decode logic facilitates a two-pin low voltage CMOS control interface and an optional external VSS feature. High ESD tolerance and no blocking capacitor requirements make this the ultimate in integration and ruggedness. The PE42540 is manufactured on PSemi’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. UltraCMOS® SP4T RF Switch 10 Hz–8 GHz
Features
- HaRP™ technology enhanced
- Fast settling time Eliminates gate and phase lag No drift in insertion loss and phase
- High linearity: 58 dBm IIP3
- Low insertion loss: 0.8 dB @ 3 GHz, 1.0 dB @ 6 GHz and 1.2 dB @ 8 GHz
- High isolation: 45 dB @ 3 GHz, 39 dB @ 6 GHz and 31 dB @ 8 GHz
- Maximum power handling: 30 dBm @ 8 GHz
- High ESD tolerance of 2 kV HBM on RFC and 1 kV HBM on all other pins
Applications
- test equipment
- ATE market
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |

