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Infineon FS100R12W2T7B11 product image
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Infineon FS100R12W2T7B11RoHS

Manufacturer
Infineon
MPN
FS100R12W2T7B11
LCSC Part #
C17529699
Packaging
-
Customer #
Key Attributes
80A 1.2kV IGBT Module IGBT Modules RoHS
Datasheetpdf iconInfineon FS100R12W2T7B11
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QtyUnit Price(Reference Only)Total Amount
1+$ 54.5293$ 54.53
30+$ 51.8269$ 1554.81
Standard Packaging15/Full Tray
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
Packaging-
Pd - Power Dissipation-
Td(off)300ns
Td(on)150ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)75pF
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V
Gate Charge(Qg)1.8uC@600V
Vce Saturation(VCE(sat))1.5V
Reverse Recovery Time(trr)-
Switching Energy(Eoff)6mJ
Turn-On Energy (Eon)6mJ
Operating Temperature-40℃~+175℃
Input Capacitance(Cies)21.7nF
Output Capacitance(Coes)-
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Features

AI Translation
  • VCES = 1200V
  • IC rated value = 100A / ICRM = 200A
  • TRENCHSTOP™ IGBT7
  • Low VCE,sat
  • Overload operating temperature up to 175°C
  • PressFIT contact technology
  • High power density
  • Compact design
  • Al₂O₃ substrate with low thermal resistance
  • 2.5kV AC 1-minute isolation

Applications

AI Translation

Auxiliary inverters, servo drives, air conditioners, motor drives, UPS systems