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KIOXIA TC58BVG1S3HBAI6 product image
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KIOXIA TC58BVG1S3HBAI6

Manufacturer
KIOXIA
MPN
TC58BVG1S3HBAI6
LCSC Part #
C17468804
Packaging
VFBGA-67(6.5x8)
Customer #
Key Attributes
2Gbit 2.7V~3.6V Parallel VFBGA-67(6.5x8) Memory RoHS
Datasheetpdf iconKIOXIA TC58BVG1S3HBAI6
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QtyUnit Price(Reference Only)Total Amount
1+$ 2.6105$ 2.61
338+$ 1.0423$ 352.30
676+$ 1.0077$ 681.21
1,014+$ 0.9904$ 1004.27
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerKIOXIA
PackagingVFBGA-67(6.5x8)
Operating Temperature-40℃~+85℃
FeaturesRead buffer function;Copy back write function;Software reset function;ECC error correction function;Hardware write protection function
Memory Size2Gbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles-
Clock Frequency-
Data Retention - TDR (Year)-
Block Erase Time(tBE)2.5ms
Page Programming Time (Tpp)25ns
Write Cycle Time(tWC)25ns
Standby Supply Current50uA
InterfaceParallel
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Introduction

AI Translation

The TC58BVG1S3HBAI6 is a single 3.3V 2Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048 blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58BVG1S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed, making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TC58BVG1S3HBAI6 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally.

Features

AI Translation
  • Organization: x8 Memory cell array 2112 x 128K x 8, Register 2112 x 8, Page size 2112 bytes, Block size (128K + 4K) bytes
  • Modes: Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read
  • Mode control: Serial input/output Command control
  • Number of valid blocks: Min 2008 blocks, Max 2048 blocks
  • Power supply: VCC = 2.7V to 3.6V
  • Access time: Cell array to register 40 μs typ. (Single Page Read) / 55 μs typ. (Multi Page Read), Read Cycle Time 25 ns min (C1 = 50pF)
  • Program/Erase time: Auto Page Program 330 μs/page typ., Auto Block Erase 2.5 ms/block typ.
  • Operating current: Read (25 ns cycle) 30 mA max, Program (avg.) 30 mA max, Erase (avg.) 30 mA max, Standby 50 μA max
  • Package: P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
  • 8bit ECC for each 528Byte is implemented on the chip.