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NTE Electronics NTE460
| Manufacturer | |
| MPN | NTE460 |
| LCSC Part # | C17420361 |
| Packaging | TO-72 |
| Customer # | |
| Key Attributes | 300mW 2mA 1 P-Channel 800Ω 20V TO-72 JFETs |
| Datasheet |  NTE Electronics NTE460 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-72 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | 20pF | |
| Pd - Power Dissipation | 300mW | |
| Drain Current (Idss) | 2mA | |
| Number | 1 P-Channel | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | 800Ω | |
| operating temperature | - | |
| Gate-Source Breakdown Voltage (Vgss) | 20V | |
| Gate-Source Cutoff Voltage (VGS(off)) | - | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-72 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | 20pF | |
| Pd - Power Dissipation | 300mW | |
| Drain Current (Idss) | 2mA | |
| Number | 1 P-Channel |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | 800Ω | |
| operating temperature | - | |
| Gate-Source Breakdown Voltage (Vgss) | 20V | |
| Gate-Source Cutoff Voltage (VGS(off)) | - | |
| Output Capacitance(Coss) | - |
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Features
AI Translation
- Drain-Gate Voltage V_DG: 20V
- Reverse Gate-Source Voltage VGSR: 20V
- Gate Current |G: 10mA
- Total Device Dissipation (T_A = +25°C) P_D: 0.3W, derate 1.7mW/°C above 25°C
- Storage Temperature Range Tstg: -65°C to +200°C
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 13.308 | $ 13.31 |
| 200+ | $ 5.3105 | $ 1062.10 |
| 500+ | $ 5.1333 | $ 2566.65 |
| 1,000+ | $ 5.0454 | $ 5045.40 |
Standard Packaging1/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-72 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | 20pF | |
| Pd - Power Dissipation | 300mW | |
| Drain Current (Idss) | 2mA | |
| Number | 1 P-Channel | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | 800Ω | |
| operating temperature | - | |
| Gate-Source Breakdown Voltage (Vgss) | 20V | |
| Gate-Source Cutoff Voltage (VGS(off)) | - | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-72 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | 20pF | |
| Pd - Power Dissipation | 300mW | |
| Drain Current (Idss) | 2mA | |
| Number | 1 P-Channel |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | 800Ω | |
| operating temperature | - | |
| Gate-Source Breakdown Voltage (Vgss) | 20V | |
| Gate-Source Cutoff Voltage (VGS(off)) | - | |
| Output Capacitance(Coss) | - |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Drain-Gate Voltage V_DG: 20V
- Reverse Gate-Source Voltage VGSR: 20V
- Gate Current |G: 10mA
- Total Device Dissipation (T_A = +25°C) P_D: 0.3W, derate 1.7mW/°C above 25°C
- Storage Temperature Range Tstg: -65°C to +200°C
C17420361 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |