NTE Electronics NTE3101
| Manufacturer | |
| MPN | NTE3101 |
| LCSC Part # | C17374870 |
| Packaging | - |
| Customer # | |
| Key Attributes | 3mm 1.7V Photointerrupters - Slot Type - Transistor Output RoHS |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Sensors, Transducers/Optical Sensors/Photointerrupters - Slot Type - Transistor Output | |
| Manufacturer | NTE Electronics | |
| Packaging | - | |
| Operating Temperature | -55℃~+100℃ | |
| Width | - | |
| Slot Width | 3mm | |
| Height | - | |
| Slit Width | - | |
| Length | - | |
| Load Voltage | 55V | |
| Voltage - Forward(Vf) | 1.7V | |
| Rise Time | 8us | |
| Output Current | 100mA | |
| Fall Time | 50us |
| Type | Description | |
|---|---|---|
| Category | Sensors, Transducers/Optical Sensors/Photointerrupters - Slot Type - Transistor Output | |
| Manufacturer | NTE Electronics | |
| Packaging | - | |
| Operating Temperature | -55℃~+100℃ | |
| Width | - | |
| Slot Width | 3mm | |
| Height | - |
| Type | Description | |
|---|---|---|
| Slit Width | - | |
| Length | - | |
| Load Voltage | 55V | |
| Voltage - Forward(Vf) | 1.7V | |
| Rise Time | 8us | |
| Output Current | 100mA | |
| Fall Time | 50us |
Introduction
The NTE3101 interrupter module is a gallium arsenide infrared emitting diode coupled with a silicon Darlington-connected phototransistor, housed in a plastic enclosure. The packaging system is designed to optimize mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an "on" state to an "off" state.
Features
- IR LED power dissipation (PE): 100mW, derate 1.33mW/℃ above 25℃
- IR LED forward current (IF): continuous 60mA, peak (pulse width ≤1μs, pulse repetition rate ≤300pps) 3A
- IR LED reverse voltage (VR): 6V
- Phototransistor power dissipation (PD): 150mW, derate 2.0mW/℃ above 25℃
- Phototransistor continuous collector current (IC): 100mA
- Phototransistor collector-emitter voltage (VCEO): 55V
- Phototransistor emitter-collector voltage (VECO): 6V
- Device operating junction temperature range (TJ): -55℃ to +100℃
- Device storage temperature range (Tstg): -55℃ to +100℃
- Lead temperature (soldering, 5s max) (TL): +260℃
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 14.7893 | $ 14.79 |
| 200+ | $ 5.9012 | $ 1180.24 |
| 500+ | $ 5.7043 | $ 2852.15 |
| 1,000+ | $ 5.6074 | $ 5607.40 |
Standard Packaging1/Full Bag | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Sensors, Transducers/Optical Sensors/Photointerrupters - Slot Type - Transistor Output | |
| Manufacturer | NTE Electronics | |
| Packaging | - | |
| Operating Temperature | -55℃~+100℃ | |
| Width | - | |
| Slot Width | 3mm | |
| Height | - | |
| Slit Width | - | |
| Length | - | |
| Load Voltage | 55V | |
| Voltage - Forward(Vf) | 1.7V | |
| Rise Time | 8us | |
| Output Current | 100mA | |
| Fall Time | 50us |
| Type | Description | |
|---|---|---|
| Category | Sensors, Transducers/Optical Sensors/Photointerrupters - Slot Type - Transistor Output | |
| Manufacturer | NTE Electronics | |
| Packaging | - | |
| Operating Temperature | -55℃~+100℃ | |
| Width | - | |
| Slot Width | 3mm | |
| Height | - |
| Type | Description | |
|---|---|---|
| Slit Width | - | |
| Length | - | |
| Load Voltage | 55V | |
| Voltage - Forward(Vf) | 1.7V | |
| Rise Time | 8us | |
| Output Current | 100mA | |
| Fall Time | 50us |
Introduction
The NTE3101 interrupter module is a gallium arsenide infrared emitting diode coupled with a silicon Darlington-connected phototransistor, housed in a plastic enclosure. The packaging system is designed to optimize mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an "on" state to an "off" state.
Features
- IR LED power dissipation (PE): 100mW, derate 1.33mW/℃ above 25℃
- IR LED forward current (IF): continuous 60mA, peak (pulse width ≤1μs, pulse repetition rate ≤300pps) 3A
- IR LED reverse voltage (VR): 6V
- Phototransistor power dissipation (PD): 150mW, derate 2.0mW/℃ above 25℃
- Phototransistor continuous collector current (IC): 100mA
- Phototransistor collector-emitter voltage (VCEO): 55V
- Phototransistor emitter-collector voltage (VECO): 6V
- Device operating junction temperature range (TJ): -55℃ to +100℃
- Device storage temperature range (Tstg): -55℃ to +100℃
- Lead temperature (soldering, 5s max) (TL): +260℃
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Type | Details |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |

