NTE Electronics 2N5460
| Manufacturer | |
| MPN | 2N5460 |
| LCSC Part # | C17182514 |
| Packaging | TO-92-3 |
| Customer # | |
| Key Attributes | 350mW 1 P-Channel 1mA 40V TO-92-3 JFETs RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92-3 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | 7pF | |
| Pd - Power Dissipation | 350mW | |
| Number | 1 P-Channel | |
| Drain Current (Idss) | 1mA | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -65℃~+135℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 40V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 750mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92-3 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | 7pF | |
| Pd - Power Dissipation | 350mW | |
| Number | 1 P-Channel | |
| Drain Current (Idss) | 1mA |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -65℃~+135℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 40V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 750mV |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Drain-gate voltage V_DG: 40V
- Reverse gate-source voltage VGSR: 40V
- Forward gate current IG(f): 10mA
- Total device dissipation (TA = +25°C) PD: 350mW, derate 2.8mW/°C above 25°C
- Operating junction temperature range TJ: -65°C to +135°C
- Storage temperature range TStg: -55°C to +150°C
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.0263 | $ 3.03 |
| 200+ | $ 1.2078 | $ 241.56 |
| 500+ | $ 1.1669 | $ 583.45 |
| 1,000+ | $ 1.1472 | $ 1147.20 |
Standard Packaging1/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92-3 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | 7pF | |
| Pd - Power Dissipation | 350mW | |
| Number | 1 P-Channel | |
| Drain Current (Idss) | 1mA | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -65℃~+135℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 40V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 750mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92-3 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | 7pF | |
| Pd - Power Dissipation | 350mW | |
| Number | 1 P-Channel | |
| Drain Current (Idss) | 1mA |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -65℃~+135℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 40V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 750mV |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Drain-gate voltage V_DG: 40V
- Reverse gate-source voltage VGSR: 40V
- Forward gate current IG(f): 10mA
- Total device dissipation (TA = +25°C) PD: 350mW, derate 2.8mW/°C above 25°C
- Operating junction temperature range TJ: -65°C to +135°C
- Storage temperature range TStg: -55°C to +150°C
C17182514 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

