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NTE Electronics 2N5460RoHS

Manufacturer
MPN
2N5460
LCSC Part #
C17182514
Packaging
TO-92-3
Customer #
Key Attributes
350mW 1 P-Channel 1mA 40V TO-92-3 JFETs RoHS
Datasheetpdf iconNTE Electronics 2N5460
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.0263$ 3.03
200+$ 1.2078$ 241.56
500+$ 1.1669$ 583.45
1,000+$ 1.1472$ 1147.20
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/JFETs
ManufacturerNTE Electronics
PackagingTO-92-3
FET TypeP-Channel
Ciss-Input Capacitance7pF
Pd - Power Dissipation350mW
Number1 P-Channel
Drain Current (Idss)1mA
Reverse Transfer Capacitance (Crss)1pF
Configuration-
RDS(on)-
operating temperature-65℃~+135℃
Gate-Source Breakdown Voltage (Vgss)40V
Output Capacitance(Coss)-
Gate-Source Cutoff Voltage (VGS(off))750mV

Features

AI Translation
  • Drain-gate voltage V_DG: 40V
  • Reverse gate-source voltage VGSR: 40V
  • Forward gate current IG(f): 10mA
  • Total device dissipation (TA = +25°C) PD: 350mW, derate 2.8mW/°C above 25°C
  • Operating junction temperature range TJ: -65°C to +135°C
  • Storage temperature range TStg: -55°C to +150°C