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Infineon IRF7104TRPBFRoHS

Manufacturer
Infineon
MPN
IRF7104TRPBF
LCSC Part #
C169767
Packaging
SO-8
Customer #
Key Attributes
MOSFET P-CH ARR 20V 2.3A SO-8
Datasheetpdf iconInfineon IRF7104TRPBF
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.7204$ 0.72
10+$ 0.5874$ 5.87
30+$ 0.5209$ 15.63
100+$ 0.4544$ 45.44
500+$ 0.4148$ 207.40
1,000+$ 0.3942$ 394.20
Standard Packaging4000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerInfineon
PackagingSO-8
Drain to Source Voltage20V
Current - Continuous Drain(Id)2.3A
Pd - Power Dissipation2W
RDS(on)400mΩ@4.5V
Gate Threshold Voltage (Vgs(th))3V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)67pF
Number2 P-Channel
Input Capacitance(Ciss)290pF
Gate Charge(Qg)25nC@10V
Operating Temperature-
Output Capacitance(Coss)210pF
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Introduction

AI Translation

Fourth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Features

AI Translation
  • Adavanced Process Technology
  • Ultra Low On-Resistance
  • Dual P-Channel MOSFET
  • Surface Mount
  • Available in Tape & Reel
  • Dynamic dv/dt Rating
  • Fast Switching
  • Lead-Free