- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
Wuxi China Resources Huajing Microelectronics CS3205B8
| Manufacturer | Wuxi China Resources Huajing MicroelectronicsAsian Brands |
| MPN | CS3205B8 |
| LCSC Part # | C162393 |
| Packaging | ITO-220AB-3 |
| Customer # | |
| Key Attributes | 55V 120A 4V 230W 8.5mΩ@10V 1 N-channel N-Channel ITO-220AB-3 Single FETs, MOSFETs |
| Datasheet |  Wuxi China Resources Huajing Microelectronics CS3205B8 |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | ITO-220AB-3 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 55V | |
| Output Capacitance(Coss) | 903pF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 230W | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.395nF | |
| Gate Charge(Qg) | 74nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | ITO-220AB-3 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 55V | |
| Output Capacitance(Coss) | 903pF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 230W | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.395nF | |
| Gate Charge(Qg) | 74nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
CS3205 B8 is a silicon N-channel enhancement-mode VDMOSFET fabricated using self-aligned planar technology, offering reduced conduction losses, improved switching performance, and enhanced avalanche energy capability. This transistor is suitable for various power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-220AB package, RoHS compliant.
Features
AI Translation
- Fast switching
- Low on-resistance (Rdson ≤ 8.5mΩ)
- Low gate charge (typical: 74nC)
- Low reverse transfer capacitance (typical: 68pF)
- 100% single-pulse avalanche energy tested
Applications
AI Translation
- Automotive
- DC motor control
- Class D amplifier
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.8806 | $ 0.88 |
| 10+ | $ 0.7506 | $ 7.51 |
| 50+ | $ 0.6856 | $ 34.28 |
| 100+ | $ 0.6207 | $ 62.07 |
| 500+ | $ 0.5833 | $ 291.65 |
| 1,000+ | $ 0.5638 | $ 563.80 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | ITO-220AB-3 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 55V | |
| Output Capacitance(Coss) | 903pF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 230W | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.395nF | |
| Gate Charge(Qg) | 74nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | ITO-220AB-3 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 55V | |
| Output Capacitance(Coss) | 903pF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 230W | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.395nF | |
| Gate Charge(Qg) | 74nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
CS3205 B8 is a silicon N-channel enhancement-mode VDMOSFET fabricated using self-aligned planar technology, offering reduced conduction losses, improved switching performance, and enhanced avalanche energy capability. This transistor is suitable for various power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-220AB package, RoHS compliant.
Features
AI Translation
- Fast switching
- Low on-resistance (Rdson ≤ 8.5mΩ)
- Low gate charge (typical: 74nC)
- Low reverse transfer capacitance (typical: 68pF)
- 100% single-pulse avalanche energy tested
Applications
AI Translation
- Automotive
- DC motor control
- Class D amplifier
C162393 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| CS120N08A8 | Wuxi China Resources Huajing Microelectronics | TO-220F-3 | 0 | $ 0.7506 |