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DIODES DMP2035UFDF-7
| Manufacturer | |
| MPN | DMP2035UFDF-7 |
| LCSC Part # | C155530 |
| Packaging | U-DFN2020-6E |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 6.9A U-DFN2020-6E |
| Datasheet |  DIODES DMP2035UFDF-7 |
| RoHS Compliance | 5 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | U-DFN2020-6E | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 155pF | |
| Current - Continuous Drain(Id) | 6.9A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 660mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 117pF | |
| RDS(on) | 20mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.808nF | |
| Gate Charge(Qg) | 20.5nC@4.5V | |
| Type | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | U-DFN2020-6E | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 155pF | |
| Current - Continuous Drain(Id) | 6.9A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 660mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 117pF | |
| RDS(on) | 20mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.808nF | |
| Gate Charge(Qg) | 20.5nC@4.5V | |
| Type | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- 0.6mm thickness – suitable for thin applications
- 4mm2 PCB footprint
- Low gate threshold voltage
- Low on-resistance
- Gate ESD protection
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "green" device
- JEDEC-compliant (as referenced in AEC-Q) high-reliability device
Applications
AI Translation
- Battery management applications
- Power management functions
- DC-DC converters
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.5313 | $ 0.53 |
| 10+ | $ 0.4468 | $ 4.47 |
| 30+ | $ 0.4111 | $ 12.33 |
| 100+ | $ 0.3672 | $ 36.72 |
| 500+ | $ 0.3461 | $ 173.05 |
| 1,000+ | $ 0.3347 | $ 334.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | U-DFN2020-6E | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 155pF | |
| Current - Continuous Drain(Id) | 6.9A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 660mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 117pF | |
| RDS(on) | 20mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.808nF | |
| Gate Charge(Qg) | 20.5nC@4.5V | |
| Type | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | U-DFN2020-6E | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 155pF | |
| Current - Continuous Drain(Id) | 6.9A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 660mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 117pF | |
| RDS(on) | 20mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.808nF | |
| Gate Charge(Qg) | 20.5nC@4.5V | |
| Type | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- 0.6mm thickness – suitable for thin applications
- 4mm2 PCB footprint
- Low gate threshold voltage
- Low on-resistance
- Gate ESD protection
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "green" device
- JEDEC-compliant (as referenced in AEC-Q) high-reliability device
Applications
AI Translation
- Battery management applications
- Power management functions
- DC-DC converters
C155530 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSCB10P02 | HUASHUO | DFN2x2-6L | 6,900 | $ 0.0849 | ||
| SiA415DJ-T1-GE3-VB | VBsemi Elec | DFN-6(2x2) | 10 | $0.6756 $0.7111 | ||
| PMPB12R7EPX-VB | VBsemi Elec | DFN-6(2x2) | 10 | $0.6726 $0.7079 | ||
| PMPB48EPAX-VB | VBsemi Elec | DFN-6(2x2) | 10 | $0.6726 $0.7079 | ||
| PMPB14XPX-VB | VBsemi Elec | DFN-6(2x2) | 10 | $0.6726 $0.7079 | ||
| PMPB12R5EPX-VB | VBsemi Elec | DFN-6(2x2) | 8 | $0.6787 $0.7144 | ||
| PMPB17EPX-VB | VBsemi Elec | DFN-6(2x2) | 4 | $0.6787 $0.7144 | ||
| DMP2035UFDF-13 | DIODES | UDFN2020-6 | 0 | $ 0.3385 | ||
| DMP2023UFDF-13 | DIODES | UDFN2020-6 | 0 | $ 0.5412 | ||
| PMPB27EPAX-VB | VBsemi Elec | DFN-6(2x2) | 0 | $0.7949 $0.8367 |