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onsemi SMMUN2214LT1G
| Manufacturer | |
| MPN | SMMUN2214LT1G |
| LCSC Part # | C154618 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | TRANS PREBIAS 50V SOT-23 |
| Datasheet |  onsemi SMMUN2214LT1G |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 0.25 | |
| Pd - Power Dissipation | 246mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V | |
| Voltage - Input(Max)(VI(off)) | 700mV | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 0.25 | |
| Pd - Power Dissipation | 246mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V | |
| Voltage - Input(Max)(VI(off)) | 700mV | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
AI Translation
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
In-Stock: 15
15 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1077 | $ 0.54 |
| 50+ | $ 0.1057 | $ 5.29 |
| 150+ | $ 0.1043 | $ 15.65 |
| 500+ | $ 0.1029 | $ 51.45 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 0.25 | |
| Pd - Power Dissipation | 246mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V | |
| Voltage - Input(Max)(VI(off)) | 700mV | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 0.25 | |
| Pd - Power Dissipation | 246mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V | |
| Voltage - Input(Max)(VI(off)) | 700mV | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
AI Translation
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
C154618 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MUN2214T1G | onsemi | SC-59 | 1,980 | $ 0.0817 | ||
| MMUN2214LT1G | onsemi | SOT-23 | 6,720 | $ 0.0398 | ||
| SMMUN2233LT1G | onsemi | SOT-23 | 195 | $ 0.0852 | ||
| MMUN2233LT1G | onsemi | SOT-23 | 122,360 | $ 0.0479 | ||
| PDTD113ZT,215 | Nexperia | SOT-23 | 10 | $ 0.153 | ||
| MUN2214T3G | onsemi | SC-59 | 0 | $ 0.027 | ||
| MUN2233T1G | onsemi | SC-59 | 0 | $ 0.0481 | ||
| PDTC114YTVL | Nexperia | SOT-23 | 0 | $ 0.043 | ||
| MMUN2234LT1G | onsemi | SOT-23 | 0 | $ 0.0329 | ||
| PDTD113ZTVL | Nexperia | SOT-23 | 0 | $ 0.031 |