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onsemi FDN327NRoHS

Manufacturer
MPN
FDN327N
LCSC Part #
C154560
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 20V 8A SOT-23
Datasheetpdf icononsemi FDN327N
In-Stock: 2,400
2,400 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2213$ 1.11
50+$ 0.1718$ 8.59
150+$ 0.1506$ 22.59
500+$ 0.1241$ 62.05
3,000+$ 0.1123$ 336.90
6,000+$ 0.1053$ 631.80
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-23
Operating Temperature-55℃~+150℃
Drain to Source Voltage20V
Output Capacitance(Coss)87pF
Current - Continuous Drain(Id)8A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)120mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)423pF
Gate Charge(Qg)6.3nC@4.5V
TypeN-Channel

Introduction

AI Translation

This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

Features

AI Translation
  • High performance trench technology for extremely low RDS(ON)

Applications

AI Translation
  • Load switch
  • Battery protection
  • Power management