Infineon/CYPRESS S25FL512SAGMFIR13
| Manufacturer | |
| MPN | S25FL512SAGMFIR13 |
| LCSC Part # | C1512161 |
| Packaging | SOIC-16-300mil |
| Customer # | |
| Key Attributes | 512Mbit 2.7V~3.6V 133MHz SPI SOIC-16-300mil Memory RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 520ms@(256KB) | |
| Page Programming Time (Tpp) | 340us | |
| Standby Supply Current | 100uA | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V |
| Type | Description | |
|---|---|---|
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 520ms@(256KB) | |
| Page Programming Time (Tpp) | 340us | |
| Standby Supply Current | 100uA | |
| Interface | SPI |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The Infineon S25FL512S device is a flash non-volatile memory product using:
- MIRRORBIT™ technology - that stores two data bits in each memory array transistor
- Eclipse architecture - that dramatically improves program and erase performance
- 65 nm process lithog
Features
AI Translation
- Density - 512 Mb (64 MB)
- SPI - SPI Clock polarity and phase modes 0 and 3 - DDR option - Extended Addressing: 32-bit address - Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families - Multi I/O Command set and footprint compatible with the S25FL-P SPI family
- READ Commands - Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad DDR - AutoBoot - power up or reset and execute a Normal or Quad read command automatically at a preselected address - Common Flash Interface (CFI) data for configuration information.
- Programming (1.5 MBps) - 512-byte Page Programming buffer - Quad-Input Page Programming (QPP) for slow clock systems - Automatic ECC - internal hardware Error Correction Code generation with single bit error correction
- Erase (0.5 to 0.65 MBps) - Uniform 256-KB sectors
- Cycling Endurance - 100,000 Program-Erase Cycles, minimum
- Data Retention - 20-Year Data Retention, minimum
- Security Features - OTP array of 1024 bytes - Block Protection: Status Register bits to control protection against program or erase of a contiguous range of sectors. Hardware and software control options - Advanced Sector Protection (ASP) Individual sector protection controlled by boot code or password
- Infineon 65 nm MIRRORBIT™ Technology with Eclipse™ Architecture
- Core supply voltage: 2.7 V to 3.6 V
- I/O supply voltage: 1.65 V to 3.6 V - SO16 and FBGA packages
- Temperature range:
- Industrial -40℃ to +85℃
- Industrial Plus -40℃ to +105℃
- Automotive, AEC-Q100 Grade 3 (-40℃ to +85℃)
- Automotive, AEC-Q100 Grade 2 -40℃ to +105℃
- Automotive, AEC-Q100 Grade 1 -40℃ to +125℃
- Packages (all Pb-free)
- 16-pin SOIC (300 mil)
- 24-ball BGA (6x8 mm)
- 5x5 ball (FAB024) and 4x6 ball (FAC024) footprint options
- Known Good Die and Known Tested Die
In-Stock: 5
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 18.8103 | $ 18.81 |
| 10+ | $ 18.1856 | $ 181.86 |
Standard Packaging1450/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 520ms@(256KB) | |
| Page Programming Time (Tpp) | 340us | |
| Standby Supply Current | 100uA | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V |
| Type | Description | |
|---|---|---|
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 520ms@(256KB) | |
| Page Programming Time (Tpp) | 340us | |
| Standby Supply Current | 100uA | |
| Interface | SPI |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The Infineon S25FL512S device is a flash non-volatile memory product using:
- MIRRORBIT™ technology - that stores two data bits in each memory array transistor
- Eclipse architecture - that dramatically improves program and erase performance
- 65 nm process lithog
Features
AI Translation
- Density - 512 Mb (64 MB)
- SPI - SPI Clock polarity and phase modes 0 and 3 - DDR option - Extended Addressing: 32-bit address - Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families - Multi I/O Command set and footprint compatible with the S25FL-P SPI family
- READ Commands - Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad DDR - AutoBoot - power up or reset and execute a Normal or Quad read command automatically at a preselected address - Common Flash Interface (CFI) data for configuration information.
- Programming (1.5 MBps) - 512-byte Page Programming buffer - Quad-Input Page Programming (QPP) for slow clock systems - Automatic ECC - internal hardware Error Correction Code generation with single bit error correction
- Erase (0.5 to 0.65 MBps) - Uniform 256-KB sectors
- Cycling Endurance - 100,000 Program-Erase Cycles, minimum
- Data Retention - 20-Year Data Retention, minimum
- Security Features - OTP array of 1024 bytes - Block Protection: Status Register bits to control protection against program or erase of a contiguous range of sectors. Hardware and software control options - Advanced Sector Protection (ASP) Individual sector protection controlled by boot code or password
- Infineon 65 nm MIRRORBIT™ Technology with Eclipse™ Architecture
- Core supply voltage: 2.7 V to 3.6 V
- I/O supply voltage: 1.65 V to 3.6 V - SO16 and FBGA packages
- Temperature range:
- Industrial -40℃ to +85℃
- Industrial Plus -40℃ to +105℃
- Automotive, AEC-Q100 Grade 3 (-40℃ to +85℃)
- Automotive, AEC-Q100 Grade 2 -40℃ to +105℃
- Automotive, AEC-Q100 Grade 1 -40℃ to +125℃
- Packages (all Pb-free)
- 16-pin SOIC (300 mil)
- 24-ball BGA (6x8 mm)
- 5x5 ball (FAB024) and 4x6 ball (FAC024) footprint options
- Known Good Die and Known Tested Die
C1512161 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |



