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Infineon/CYPRESS S25FL512SAGMFIR13 product image
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Infineon/CYPRESS S25FL512SAGMFIR13RoHS

Manufacturer
MPN
S25FL512SAGMFIR13
LCSC Part #
C1512161
Packaging
SOIC-16-300mil
Customer #
Key Attributes
512Mbit 2.7V~3.6V 133MHz SPI SOIC-16-300mil Memory RoHS
Datasheetpdf iconInfineon/CYPRESS S25FL512SAGMFIR13
In-Stock: 5
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QtyUnit PriceTotal Amount
1+$ 18.8103$ 18.81
10+$ 18.1856$ 181.86
Standard Packaging1450/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerInfineon/CYPRESS
PackagingSOIC-16-300mil
Operating Temperature-40℃~+85℃
Features-
Memory Size512Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency133MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)520ms@(256KB)
Page Programming Time (Tpp)340us
Standby Supply Current100uA
InterfaceSPI

Introduction

AI Translation

The Infineon S25FL512S device is a flash non-volatile memory product using:

  • MIRRORBIT™ technology - that stores two data bits in each memory array transistor
  • Eclipse architecture - that dramatically improves program and erase performance
  • 65 nm process lithog

Features

AI Translation
  • Density - 512 Mb (64 MB)
  • SPI - SPI Clock polarity and phase modes 0 and 3 - DDR option - Extended Addressing: 32-bit address - Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families - Multi I/O Command set and footprint compatible with the S25FL-P SPI family
  • READ Commands - Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad DDR - AutoBoot - power up or reset and execute a Normal or Quad read command automatically at a preselected address - Common Flash Interface (CFI) data for configuration information.
  • Programming (1.5 MBps) - 512-byte Page Programming buffer - Quad-Input Page Programming (QPP) for slow clock systems - Automatic ECC - internal hardware Error Correction Code generation with single bit error correction
  • Erase (0.5 to 0.65 MBps) - Uniform 256-KB sectors
  • Cycling Endurance - 100,000 Program-Erase Cycles, minimum
  • Data Retention - 20-Year Data Retention, minimum
  • Security Features - OTP array of 1024 bytes - Block Protection: Status Register bits to control protection against program or erase of a contiguous range of sectors. Hardware and software control options - Advanced Sector Protection (ASP) Individual sector protection controlled by boot code or password
  • Infineon 65 nm MIRRORBIT™ Technology with Eclipse™ Architecture
  • Core supply voltage: 2.7 V to 3.6 V
  • I/O supply voltage: 1.65 V to 3.6 V - SO16 and FBGA packages
  • Temperature range:
    • Industrial -40℃ to +85℃
    • Industrial Plus -40℃ to +105℃
    • Automotive, AEC-Q100 Grade 3 (-40℃ to +85℃)
    • Automotive, AEC-Q100 Grade 2 -40℃ to +105℃
    • Automotive, AEC-Q100 Grade 1 -40℃ to +125℃
  • Packages (all Pb-free)
    • 16-pin SOIC (300 mil)
    • 24-ball BGA (6x8 mm)
  • 5x5 ball (FAB024) and 4x6 ball (FAC024) footprint options
  • Known Good Die and Known Tested Die