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RENESAS R5F10277GNA#45

Produttore
Cod. Prod.
R5F10277GNA#45
Cod. LCSC
C1511280
Imballo
HWQFN-24-EP(4x4)
Numero Cliente
Attr. chiave
RL78 16 Bit 24MHz 18 HWQFN-24-EP(4x4) Microcontrollers RoHS
Scheda Tecnicapdf iconRENESAS R5F10277GNA#45
Parti alternative10
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 0.9585$ 0.96
200+$ 0.372$ 74.40
500+$ 0.3581$ 179.05
1,000+$ 0.352$ 352.00
Package Standard2500/Full Reel
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaIntegrated Circuits (ICs)/Embedded/Microcontrollers
ProduttoreRENESAS
ImballoHWQFN-24-EP(4x4)
ADC (Bit)10bit
Operating Temperature-40℃~+105℃
Voltage - Supply1.8V~5.5V
Program Memory TypeFLASH
Program Storage Size4KB
EEPROM2KB
CPU CoreRL78
Core Size16 Bit
CPU Maximum Speed24MHz
Oscillator TypeBuilt-in
Number of I/O18

Descrizione

Traduzione AI

True low-power platform (63 μA/MHz) for the general-purpose applications, with 1.8-V to 5.5-V operation, 2- to 16-Kbyte code flash memory, and 31 DMIPS at 24 MHz

Caratteristiche

Traduzione AI
  • Ultra-low power consumption technology
    • VDD = single power supply voltage of 1.8 to 5.5 V which can operate at a low voltage
    • HALT mode
    • STOP mode
    • SNOOZE mode
  • RL78 CPU core
    • CISC architecture with 3-stage pipeline
    • Minimum instruction execution time: Can be changed from high speed (0.04167 μs @ 24 MHz operation with high-speed on-chip oscillator) to ultra-low speed (Δ μs @ 1 MHz operation)
    • Address space: 1 MB
    • General-purpose registers: (8-bit register x 8) x 4 banks
    • On-chip RAM: 256 B to 2 KB
  • Code flash memory
    • Code flash memory: 2 to 16 KB
    • Block size: 1 KB
    • Prohibition of block erase and rewriting (security function) On-chip debug function
    • Self-programming (with flash shield window function)
  • Data flash memory
    • Data flash memory: 2 KB Back ground operation (BGO): Instructions are executed from the program memory while rewriting the data flash memory.
    • Number of rewrites: 1,000,000 times (TYP.)
    • Voltage of rewrites: VDD = 1.8 to 5.5 V
  • High-speed on-chip oscillator
    • Select from 24 MHz, 16 MHz, 12 MHz, 8 MHz, 6 MHz, 4 MHz, 3 MHz, 2 MHz, and 1 MHz High accuracy: +/- 1.0% (VDD = 1.8 to 5.5 V, TA = -20 to +85 °C)
  • Operating ambient temperature
    • TA = -40 to +85 °C (A: Consumer applications, D: Industrial applications)
    • TA = -40 to +105 °C (G: Industrial applications)
  • Power management and reset function
    • On-chip power-on-reset (POR) circuit On-chip voltage detector (LVD) (Select interrupt and reset from 12 levels)
  • DMA (Direct Memory Access) controller
    • 2 channels Number of clocks during transfer between 8/16-bit SFR and internal RAM: 2 clocks
  • Multiplier and divider/multiply-accumulator
    • 16 bits x 16 bits = 32 bits (Unsigned or signed)
    • 32 bits x 32 bits = 32 bits (Unsigned)
    • 16 bits x 16 bits + 32 bits = 32 bits (Unsigned or signed)
  • Serial interface
    • CSI : 1 to 3 channels
    • UART : 1 to 3 channels
    • Simplified I²C communication : 0 to 3 channels
    • I²C communication : 1 channel
  • Timer
    • 16-bit timer : 4 to 8 channels
    • 12-bit interval timer : 1 channel
    • Watchdog timer : 1 channel (operable with the dedicated low-speed on-chip oscillator)
  • A/D converter
    • 8/10-bit resolution A/D converter (VDD = 1.8 to 5.5 V)
    • 8 to 11 channels, internal reference voltage (1.45 V), and temperature sensor
  • I/O port
    • I/O port: 18 to 26 (N-ch open drain I/O [withstand voltage of 6 V]: 2, N-ch open drain I/O [VDD withstand voltage]: 4 to 9) Can be set to N-ch open drain, TTL input buffer, and on-chip pull-up resistor Different potential interface: Can connect to a 1.8/2.5/3 V device
    • On-chip key interrupt function
    • On-chip clock output/buzzer output controller
  • Others
    • On-chip BCD (binary-coded decimal) correction circuit

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