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ST VNS3NV04DPTR-E product image
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ST VNS3NV04DPTR-ERoHS

Manufacturer
ST
MPN
VNS3NV04DPTR-E
LCSC Part #
C146561
Packaging
SO-8
Customer #
Key Attributes
fully autoprotected Power MOSFET
Datasheetpdf iconST VNS3NV04DPTR-E
In-Stock: 4,624
4,624 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.8562$ 1.86
10+$ 1.5627$ 15.63
30+$ 1.4282$ 42.85
100+$ 1.2774$ 127.74
500+$ 1.2094$ 604.70
1,000+$ 1.1786$ 1178.60
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Power Distribution Switches, Load Drivers
ManufacturerST
PackagingSO-8
Operating Temperature-40℃~+150℃
FeaturesOvercurrent Protection;Short-Circuit Protection;Over temperature protection;Overvoltage protection
number of channels2
Control Input Logic-
Maximum Continuous Current3.5A
RDS(on)120mΩ
Operating Voltage-
Type-
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Introduction

AI Translation

The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using VIPower M0-3 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring voltage at the input pin

Features

AI Translation
  • ECOPACK: lead free and RoHS compliant Automotive Grade: compliance with AEC guidelines
  • Linear current limitation
  • Thermal shutdown
  • Short circuit protection
  • Integrated clamp
  • Low current drawn from input pin
  • Diagnostic feedback through input pin
  • ESD protection Direct access to the gate of the Power MOSFET (analog driving)
  • Compatible with standard Power MOSFET